m52s128324a Elite Semiconductor Memory Technology Inc., m52s128324a Datasheet - Page 22

• Manufacturer Part Number: m52s128324a
• Description: 1m X 32 Bit X 4 Banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
6. Precharge
.
7. Auto Precharge
*Note : 1. t
Elite Semiconductor Memory Technology Inc.
C L K
C M D
C L K
D Q
D Q
1 ) N o r m a l W r i t e ( B L = 4 )
2. Number of valid output data after row precharge : 1,2 for CAS Latency = 2,3 respectively.
3. The row active command of the precharge bank can be issued after t
1 ) N o r m a l W r i t e ( B L = 4 )
The new read/write command of other activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
RDL
W R
D 0
W R
: Last data in to row precharge delay.
D 0
D 1
D 1
D 2
D 2
D 3
t
* N o t e 1
R D L
D 3
A u t o P r e c h a r g e s t a r t s
t
R D L
P R E
* N o t e 3
D Q ( C L 3 )
D Q ( C L 2 )
D Q ( C L 3 )
D Q ( C L 2 )
C M D
C M D
C L K
C M D
C L K
2 ) N o r m a l R e a d ( B L = 4 )
2 ) N o r m a l R e a d ( B L = 4 )
R D
R D
RP
from this point.
Q0
Publication Date: Mar. 2009
Revision: 1.4
Q0
Q0
A u t o P r e c h a r g e s t a r t s
M52S128324A
Q1
Q 0
Q1
P R E
P R E C L = 3
Q2
Q1
Q 2
Q1
* N o t e 3
C L = 2
Q3
Q2
Q3
Q2
1 * N o t e 2
Q3
Q3
2 * N o t e 2
22/47