kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 14

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

2.5
2.6
2.6.1
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
The MuxOneNAND architecture integrates several memory areas on a single chip.
The on-chip internal memory is a single-level-cell (SLC) NAND array used for data storage and code. The internal memory is divided
into a main area and a spare area.
Main Area
The main area is the primary memory array. This main area is divided into Blocks of 64 Pages. Within a Block, each Page is 2KB and
is comprised of 4 Sectors. Within a Page, each Sector is 512B and is comprised of 256 Words.
Spare Area
The spare area is used for invalid block information and ECC storage. Spare area internal memory is associated with corresponding
main area memory. Within a Block, each Page has four 16B Sectors of spare area. Each spare area Sector is 8 words.
ADQ15~ADQ0
INT / INT1
CE / CE1
INT2*
* Note : CE2 and INT2 are only available in QDP device
CE2*
AVD
RDY
Internal (NAND Array) Memory Organization
CLK
Block Diagram
Memory Array Organization
WE
OE
RP
(Address/Command/Configuration
BufferRAM
DataRAM1
DataRAM0
BootRAM
Internal Registers
/Status Registers)
14
Bootloader
StateMachine
Correction
Logic
Error
FLASH MEMORY
1st Block OTP
(One Block)
NAND Flash
(Block 0)
Array
OTP