kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 96
kfm2g16q2m-deb8
Manufacturer Part Number
kfm2g16q2m-deb8
Description
2gb Muxonenand M-die
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.KFM2G16Q2M-DEB8.pdf
(177 pages)
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3.7.2.1 Continuous Linear Burst Read Operation
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
First Clock Cycle
The initial word is output at tIAA after the rising edge of the first CLK cycle. The RDY output indicates the initial word is ready to the
system by pulsing high. If the device is accessed synchronously while it is set to Asynchronous Read Mode, the first data can still be
read out.
Subsequent Clock Cycles
Subsequent words are output (Burst Access Time from Valid Clock to Output) tBA after the rising edge of each successive clock
cycle, which automatically increments the internal address counter.
Terminating Burst Read
The device will continue to output sequential burst data until the system asserts CE high, or RP low, wrapping around until it reaches
the designated address (see Section 2.7.3 for address map information). Alternately, a Cold/Warm/Hot Reset, or a WE low pulse will
terminate the burst read operation.
Synchronous Read Boundary
3.7.2.2 4-, 8-, 16-, 32-Word Linear Burst Read Operation
An alternate Burst Read Mode enables a fixed number of words to be read from consecutive address.
The device supports a burst read from consecutive addresses of 4-, 8-, 16-, and 32-words with a linear-wrap around. When the last
word in the burst has been reached, assert CE and OE high to terminate the operation.
In this mode, the start address for the burst read can be any address of the address map with one exception. The device does not
support a 32-word linear burst read on the spare area of the BufferRAM.
BufferRAM0 Spare(32w)
BufferRAM1 Spare(32w)
BufferRAM0 Main(1Kw)
BufferRAM1 Main(1Kw)
BootRAM Main(0.5Kw)
BootRAM Spare(16w)
See Timing Diagram 6.1
See Timing Diagram 6.2
Reserved Register
Reserved Spare
Reserved Main
Register(4Kw)
Division
* Reserved area is not available on Synchronous read
Add.map(word order)
96
0A00h~7FFFh
8000H~800Fh
9000h~EFFFh
F000h~FFFFh
0000h~01FFh
0200h~05FFh
0600h~09FFh
8010h~802Fh
8030h~804Fh
8050h~8FFFh
FLASH MEMORY
Not Support
Not Support
Not Support
Not Support
Not Support
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