kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 63

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

2.8.13 Start Address5 Register F104h (R/W)
2.8.14 Start Address6 Register F105h
2.8.16 Start Address8 Register F107h (R/W)
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
This Read/Write register describes the number of page in Synchronous Burst Block Read.
F104h, default = 0000h
Flash Page Count (FPC) Information
Note) Synchronous Burst Block Read are NOT able to be perforformed with 1 or 2pages.
This register is reserved for future use.
2.8.15 Start Address7 Register F106h
This register is reserved for future use.
This Read/Write register describes the NAND Flash start page address in a block for a page load, copy back program, or program
operation and the NAND Flash start sector address in a page for a load, copy back program, or program operation.
F107h, default = 0000h
1) In case of ’2X Cache Program’, the host programs data on same FPA of different Planes.
2) In case of ’ Synchronous Burst Block Read’, ’Cache Read Operation’, ’2X Program’ and ’2X Cache Program’,
Start Address8 Information
15
15
FSA has to be set to 00.
14
14
Item
FSA
FPA
13
000000 (Default)
13
Reserved (00000000)
000100
000011
111111
FPC
..
12
12
Reserved(0000000000)
NAND Flash Sector Address
11
NAND Flash Page Address
11
Description
10
10
9
9
8
8
63
7
7
Default Value
6
000000
6
00
Number of Page
5
5
FPA
64 page
63 page
3 page
4 page
1)
..
4
4
FLASH MEMORY
3
3
FPC
6 bits for 64 pages
2 bits for 4 sectors
000000 ~ 111111,
2
2
00 ~ 11,
Range
1
1
FSA
2)
0
0