kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 79

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
2.8.23 Start Block Address Register F24Ch (R/W)
This Read/Write register shows the NAND Flash block address in the Write Protection mode. Setting this register precedes a 'Lock
Block' command, 'Unlock Block' command, or ’Lock-Tight' Command.
F24Ch, default = 0000h
SBA Information[10:0]
2.8.24 End Block Address Register F24Dh
This register is reserved for future use.
2.8.25 NAND Flash Write Protection Status Register F24Eh (R)
This Read register shows the Write Protection Status of the NAND Flash memory array.
To read the write protection status, FBA(DFS and DBS also in case of DDP) has to be set before reading the register
F24Eh, default = 0002h
Write Protection Status Information[2:0]
15
15
Item
LTS
US
LS
Item
SBA
14
14
Reserved(000000)
Device
13
13
2Gb
Locked-Tight Status
Unlocked Status
12
12
Locked Status
Definition
Start Block Address
11
11
Definition
Reserved(0000000000000)
10
10
9
9
Number of Block
8
8
2048
Or First Block of NAND Flash Array is Locked to be OTP
79
Precedes Lock Block, Unlock Block, or Lock-Tight commands
7
7
1 = current NAND Flash block is locked-tight
1 = current NAND Flash block is unlocked
1 = current NAND Flash block is locked
6
6
SBA
5
5
Description
Description
4
4
FLASH MEMORY
3
3
[10:0]
SBA
US
2
2
.
LS
1
1
LTS
0
0