kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 148

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and pull-down resistor value.
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
5.9 AC Characteristics for Load/Program/Erase Performance
5.10 AC Characteristics for INT Auto Mode
5.11 AC Characteristics for Synchronous Burst Block Read
Sector Load time(Note 1)
Page Load time(Note 1)
Sector Program time(Note 1)
Page Program time(Note 1)
OTP Access Time(Note 1)
Lock/Unlock/Lock-tight/All Block Unlock Time(Note 1)
Erase Suspend Time(Note 1)
Erase Resume Time(Note 1)
Number of Partial Program Cycles in the page (Including main and
spare area)
Block Erase time (Note 1)
Multi Block Erase Verify Read time(Note 1)
Command Input to INT Low
INT Low Period During Synch Burst Block Read
See Timing Diagrams 6.11, 6.12, and 6.16
See Timing Diagrams 6.25
See Timing Diagrams 6.3, 6.4
Parameter
Parameter
Parameter
2~64 Blocks
2~64 Blocks
1 Block
1 Block
Symbol
148
t
t
t
t
t
t
t
NOP
BERS1
BERS2
t
t
PGM1
PGM2
t
LOCK
t
t
ERS1
ERS2
RD1
RD2
OTP
ESP
RD3
Symbol
Symbol
t
t
INTL
WB
Min
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Min
1
-
Typ
205
220
500
500
400
1.5
1.5
23
30
70
FLASH MEMORY
4
4
-
Max
Max
200
-
Max
720
750
700
700
500
100
35
45
2
6
4
2
6
Unit
Unit
cycles
Unit
ns
us
ms
ms
ms
ms
µs
µs
µs
µs
ns
ns
µs
µs