kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 5

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

1.3
MuxOneNAND is a highly integrated non-volatile memory solution based around a NAND Flash memory array.
The chip integrates system features including:
This on-chip integration enables system designers to reduce external system logic and use high-density NAND Flash in applications
that would otherwise have to use more NOR components.
MuxOneNAND takes advantage of the higher performance NAND program time, low power, and high density and combines it with
the synchronous read performance of NOR. The NOR Flash host interface makes MuxOneNAND an ideal solution for applications
like G3 Smart Phones, Camera Phones, and mobile applications that have large, advanced multimedia applications and operating
systems, but lack a NAND controller.
When integrated into a Samsung Multi-Chip-Package with Samsung Mobile DDR SDRAM, designers can complete a high-perfor-
mance, small footprint solution.
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
1.2
Device Type
M : Mux Single Chip
N : Mux Dual Chip
K: Mux Quad Chip
Density
2G : 2Gb
4G : 4Gb
8G : 8Gb
Samsung
OneNAND Memory
Organization
Operating Voltage Range
Q : 1.8V(1.7 V to 1.95V)
x16 Organization
• A BootRAM and bootloader
• Two independent bi-directional 2KB DataRAM buffers
• A High-Speed x16 Host Interface
• On-chip Error Correction
• On-chip NOR interface controller
Architectural Benefits
Ordering Information
K F X XX 1 6 Q 2 M - D E X X
5
Operating Temperature Range
E = Extended Temp. (-30 °C to 85 °C)
FLASH MEMORY
Package
D : FBGA(Lead Free)
Page Architecture
Version
2 : 2KB Page
1st Generation
Speed
6 : 66MHz
8 : 83MHz
Product Line desinator
B : Include Bad Block
D : Daisy Sample