kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 62

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

2.8.11 Start Address3 Register F102h (R/W)
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
This Read/Write register describes the NAND Flash destination block address which will be copy back programmed. Also, this regis-
ter indicates the block address for the first page to be read in Cache Read Operation.
F102h, default = 0000h
Start Address3 Information
2.8.12 Start Address4 Register F103h (R/W)
This Read/Write register describes the NAND Flash destination page address in a block and the NAND Flash destination sector
address in a page for copy back programming. Also, this register describes the first page and sector address to be loaded in Cache
Read Operation.
F103h, default = 0000h
Note 1) In case of ’Cache Read Operation’, FCSA has to be set to 00.
Start Address4 Information
15
15
Register Information
FCSA
FCPA
Item
14
14
Reserved(00000)
FCBA
Device
13
2Gb
13
Reserved(00000000)
12
12
NAND Flash Copy Back Sector Address &
NAND Flash Copy Back Page Address &
First Sector Address of Cache Read
First Page Address of Cache Read
11
11
10
10
Description
Block Address for the first page to be read in Cache Read Operation
9
9
Number of Block
8
NAND Flash Copy Back Block Address &
2048
8
62
7
7
6
Description
6
FCBA
Default Value
5
000000
5
FCPA
00
4
4
FLASH MEMORY
3
3
FCBA[10:0]
6 bits for 64 pages
2 bits for 4 sectors
FBA
000000 ~ 111111,
2
2
00 ~ 11,
Range
1
1
FCSA
0
0