h8s-2138 Renesas Electronics Corporation., h8s-2138 Datasheet - Page 851

• Manufacturer Part Number: h8s-2138
• Description: Renesas 16-bit Single-chip Microcomputer H8s Family/h8s/2100 Series
• Manufacturer: Renesas Electronics Corporation.

25.5.6
Table 25.49 shows the flash memory characteristics.
Table 25.49 Flash Memory Characteristics (Programming/Erasing Operating Range)
Conditions (5-V version): V
Item
Programming time *
Erase time *
Reprogramming count
Data retention time *
Programming Wait time after SWE-bit setting *
Erase
Flash Memory Characteristics
1
*
(3-V version): V
3
*
Wait time after PSU-bit setting *
Wait time after P-bit setting *
Wait time after P-bit clear *
Wait time after PSU-bit clear *
Wait time after PV-bit setting *
Wait time after dummy write *
Wait time after PV-bit clear *
Wait time after SWE-bit clear *
Maximum programming
count *
Wait time after SWE-bit setting *
Wait time after ESU-bit setting *
Wait time after E-bit setting *
Wait time after E-bit clear *
Wait time after ESU-bit clear *
Wait time after EV-bit setting *
Wait time after dummy write *
Wait time after EV-bit clear *
Wait time after SWE-bit clear *
Maximum erase count *
6
1
10
*
2
1
*
*
4
4
*
5
specifications), T
CC
CC
= 4.0 V to 5.5 V, V
= 3.0 V to 3.6 V, V
1
*
6
*
1
1
7
1
1
1
1
*
1
*
1
1
1
1
1
1
1
4
6
1
1
1
1
Symbol Min
tP
tE
N
t
x
y
z1
z2
z3
N
x
y
z
N
a
DRP
WEC
= –40 to +85°C (wide-range specifications)
SS
SS
= 0 V, T
= 0 V, T
—
—
100 *
10
1
50
28
198
8
5
5
4
2
4
100
—
1
100
10
10
10
20
2
4
100
—
Rev. 4.00 Jun 06, 2006 page 797 of 1004
8
a
Section 25 Electrical Characteristics
Typ
10
100
10000 *
—
—
—
30
200
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
a
= –20 to +75°C (regular
= –20 to +75°C
9
Max
200
1200
—
—
—
—
32
202
12
—
—
—
—
—
—
1000
—
—
100
—
—
—
—
—
—
120
Unit
ms/
128 bytes
ms/block
Times
Years
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times
REJ09B0301-0400
Test
Condition
1
7
Additional
writing
n
n
6
1000