NAND08GW3C2A NUMONYX [Numonyx B.V], NAND08GW3C2A Datasheet - Page 33

• Manufacturer Part Number: NAND08GW3C2A
• Description: 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
• Manufacturer: NUMONYX [Numonyx B.V]

NAND08GW3C2A, NAND16GW3C2A
8
9
9.1
Data protection
The device has hardware features to protect against Program and Erase operations. It
features a Write Protect, WP, pin, which protects the device against program and erase
operations. It is recommended to keep WP at V
Software algorithms
This section gives information on the software algorithms that Numonyx recommends
implementing to manage the bad blocks and extend the lifetime of the NAND device.
NAND Flash memories are programmed and erased by Fowler-Nordheim tunneling using
high voltage. Exposing the device to high voltage for extended periods can cause the oxide
layer to be damaged. For this reason, the number of program and erase cycles is limited
(see
and error correction code algorithms to extend the number of program and erase cycles and
to increase data retention.
To help integrate a NAND memory into an application Numonyx can provide a File System
OS Native reference software, which supports the basic commands of file management.
Contact the nearest Numonyx sales office for more details.
Bad block management
Devices with bad blocks have the same quality level and the same AC and DC
characteristics as devices where all the blocks are valid. A bad block does not affect the
performance of valid blocks because it is isolated from the bit line and common source line
by a select transistor.
The devices are supplied with all the locations inside valid blocks erased (FFh). The bad
block information is written prior to shipping. Any block, where the 1st byte in the spare area
of the last page, does not contain FFh, is a bad block.
The bad block information must be read before any erase is attempted as the bad block
Information may be erased. For the system to be able to recognize the bad blocks based on
the original information it is recommended to create a bad block table following the flowchart
shown in
Table 15
Figure 14.
for value). It is recommended to implement garbage collection, wear-leveling
IL
during power-up and power-down.
Data protection
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