NAND08GW3C2A NUMONYX [Numonyx B.V], NAND08GW3C2A Datasheet - Page 41

• Manufacturer Part Number: NAND08GW3C2A
• Description: 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
• Manufacturer: NUMONYX [Numonyx B.V]

NAND08GW3C2A, NAND16GW3C2A
Table 19.
I
Symbol
OL
I
I
I
I
I
V
V
V
DD1
DD2
DD3
DD4
DD5
I
V
I
LO
OH
LI
OL
(RB)
IH
IL
DC characteristics
Parameter
Operating
Standby current (CMOS)
Output high voltage level
Output low voltage level
Output low current (RB)
Output leakage Current
Standby current (TTL)
current
Input leakage Current
Input high voltage
Input low voltage
Sequential
Program
Erase
read
E=V
E=V
Test conditions
V
t
V
RLRL
OUT
I
OH
I
E=V
IN
WP=0/V
OL
V
IL,
IH
OL
= 0 to 3.6V
, WP=0/V
= 0 to 3.6V
I
= -400µA
= 2.1mA
OUT
minimum
DD
= 0.4V
-
-
-
-
-0.2,
= 0 mA
DD
DD
Min
-0.3
2.0
2.4
8
-
-
-
-
-
-
-
DC and AC parameters
Typ
15
15
15
10
10
-
-
-
-
-
-
V
DD
Max
±10
±10
0.8
0.4
30
30
30
50
1
-
+0.3
Unit
41/58
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V