NAND08GW3C2A NUMONYX [Numonyx B.V], NAND08GW3C2A Datasheet - Page 34

• Manufacturer Part Number: NAND08GW3C2A
• Description: 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
• Manufacturer: NUMONYX [Numonyx B.V]

Software algorithms
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NAND Flash memory failure modes
The NAND08GW3C2A and NAND16GW3C2A devices may contain bad blocks, where the
reliability of blocks that contain one or more invalid bits is not guaranteed. Additional bad
blocks may develop during the lifetime of the device.
To implement a highly reliable system, all the possible failure modes must be considered:
Refer to
Table 14.
Program/erase failure
in this case, the block has to be replaced by copying the data to a valid block. These
additional bad blocks can be identified as attempts to program or erase them and will
give errors in the Status Register.
Because the failure of a Page Program operation does not affect the data in other
pages in the same block, the block can be replaced by re-programming the current data
and copying the rest of the replaced block to an available valid block. The Copy Back
Program command can be used to copy the data to a valid block. See
10.: Random Data Input during Sequential Data Input
Read failure
in this case, ECC correction must be implemented. To efficiently use the memory
space, it is recommended to recover single-bit errors in read by ECC, without replacing
the whole block.
Table 14
Block failure
for the procedure to follow if an error occurs during an operation.
Operation
Program
Erase
Read
Block replacement or ECC (with 4 bit/528 byte)
NAND08GW3C2A, NAND16GW3C2A
ECC (with 4 bit/528 byte)
for more details.
Block replacement
Procedure
Section Figure