MCIMX6D7CVT08AC Freescale Semiconductor, MCIMX6D7CVT08AC Datasheet - Page 35

• Manufacturer Part Number: MCIMX6D7CVT08AC
• Description: Processors - Application Specialized i.MX6D
• Manufacturer: Freescale Semiconductor
• Type: Multimedia Applicationsr

Specifications of MCIMX6D7CVT08AC

• Rohs: yes
• Core: ARM Cortex A9
• Processor Series: i.MX6
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 800 MHz
• Data Ram Size: 16 KB
• Maximum Operating Temperature: + 105
• Mounting Style: SMD/SMT
• Package / Case: FCBGA
• Interface Type: I2C, I2S, UART, USB
• Memory Type: L1/L2 Cache, ROM, SRAM
• Minimum Operating Temperature: - 40 C
• Number Of Timers: 2

power from VDD_HIGH_IN when that supply is available and transitions to the back up battery when
VDD_HIGH_IN is lost.
In addition, if the clock monitor determines that the OSC32K is not present, then the source of the 32 kHz
clock will automatically switch to a crude internal ring oscillator. The frequency range of this block is
approximately 10–45 kHz. It highly depends on the process, voltage, and temperature.
The OSC32k runs from VDD_SNVS_CAP, which comes from the VDD_HIGH_IN/VDD_SNVS_IN
power mux. The target battery is a ~3 V coin cell. Proper choice of coin cell type is necessary for chosen
VDD_HIGH_IN range. Appropriate series resistor (Rs) must be used when connecting the coin cell. Rs
depends on the charge current limit that depends on the chosen coin cell. For example, for Panasonic
ML621:
For a charge voltage of 3.2 V, Rs = (3.2-2.5)/0.6 m = 1.17 k
4.6
This section includes the DC parameters of the following I/O types:
Freescale Semiconductor
consumption
Bias resistor
Parameter
Current
•
•
•
•
•
Cload
Fosc
ESR
Average Discharge Voltage is 2.5 V
Maximum Charge Current is 0.6 mA
General Purpose I/O (GPIO)
Double Data Rate I/O (DDR) for LPDDR2 and DDR3/DDR3L modes
LVDS I/O
I/O DC Parameters
Min
Always refer to the chosen coin cell manufacturer's data sheet for the latest
information.
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—
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i.MX 6Dual/6Quad Applications Processors for Industrial Products, Rev. 2
32.768 kHz
14 M
50 k
10 pF
4 A
Typ
100 k Equivalent series resistance of the crystal. Choosing a crystal with a higher value
Max
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Table 20. OSC32K Main Characteristics
This frequency is nominal and determined mainly by the crystal selected. 32.0 K
would work as well.
The typical value shown is only for the oscillator, driven by an external crystal. If
the internal ring oscillator is used instead of an external crystal, then
approximately 25 A should be added to this value.
This the integrated bias resistor that sets the amplifier into a high gain state. Any
leakage through the ESD network, external board leakage, or even a scope probe
that is significant relative to this value will debias the amplifier. The debiasing will
result in low gain, and will impact the circuit's ability to start up and maintain
oscillations.
Usually crystals can be purchased tuned for different Cloads. This Cload value is
typically 1/2 of the capacitances realized on the PCB on either side of the quartz.
A higher Cload will decrease oscillation margin, but increases current oscillating
through the crystal.
will decrease the oscillating margin.
Target Crystal Properties
NOTE
Comments
Electrical Characteristics
35