MT48V8M16LFB4-8:G Micron Technology Inc, MT48V8M16LFB4-8:G Datasheet - Page 66

• Manufacturer Part Number: MT48V8M16LFB4-8:G
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48V8M16LFB4-8:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 19/8/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 45:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
DQMU, DQML
A0–A9, A11
COMMAND
BA0, BA1
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
Single Read – Without Auto Precharge
ACTIVE
ROW
ROW
T0
BANK
t CMH
t CKH
t AH
t AH
t AH
Notes:
t CK
t RCD
t RAS
t RC
T1
NOP
1. For this example, BL = 4, CL = 2, and the READ burst is followed by a “manual” PRECHARGE.
2. x16: A9 and A11 = “Don’t Care.”
3. PRECHARGE command not allowed or
x32: A8, A9, and A11 = “Don’t Care.”
See Table 17 on page 53.
DISABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m
T2
BANK
READ
t CMH
t CH
CAS Latency
2
T3
NOP
t LZ
3
t AC
66
T4
D
NOP
OUT
t OH
t HZ
3
m
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SINGLE BANKS
RAS would be violated.
PRECHARGE
ALL BANKS
BANK(S)
T5
t RP
128Mb: x16, x32 Mobile SDRAM
T6
NOP
©2001 Micron Technology, Inc. All rights reserved.
ACTIVE
ROW
BANK
ROW
T7
UNDEFINED
Timing Diagrams
T8
NOP
DON’T CARE