MT41J64M16LA-15E:B TR Micron Technology Inc, MT41J64M16LA-15E:B TR Datasheet - Page 134
![IC DDR3 SDRAM 1GBIT 96FBGA](/photos/7/23/72317/mfg557-60-fbga_sml.jpg)
MT41J64M16LA-15E:B TR
Manufacturer Part Number
MT41J64M16LA-15E:B TR
Description
IC DDR3 SDRAM 1GBIT 96FBGA
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Specifications of MT41J64M16LA-15E:B TR
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
1G (64M x 16)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
96-FBGA
Organization
64Mx16
Density
1Gb
Address Bus
16b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
355mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 76: READ to PRECHARGE (BC4)
Figure 77: READ to PRECHARGE (AL = 5, CL = 6)
Figure 78: READ with Auto Precharge (AL = 4, CL = 6)
DQS, DQS#
Command
DQS, DQS#
DQS, DQS#
Command
Command
Address
Address
Address
CK#
CK
DQ
CK#
CK#
DQ
CK
DQ
CK
Bank a,
READ
READ
Bank a,
Bank a,
Col n
Col n
READ
T0
T0
Col n
T0
NOP
T1
NOP
NOP
T1
T1
NOP
T2
AL = 4
NOP
t RAS
NOP
T2
T2
t RTP
AL = 5
NOP
T3
NOP
NOP
T3
T3
NOP
T4
NOP
NOP
T4
T4
t RAS
Bank a,
(or all)
PRE
T5
NOP
NOP
T5
T5
NOP
T6
t RTP (MIN)
NOP
NOP
T6
T6
t RAS (MIN)
NOP
T7
CL = 6
t RTP
NOP
NOP
T7
T7
NOP
T8
DO
n
CL = 6
n + 1
DO
NOP
NOP
NOP
t RP
T8
T8
T9
n + 2
DO
n + 3
DO
Bank a,
T10
NOP
(or all)
PRE
NOP
T9
T9
NOP
T11
T10
NOP
NOP
T10
DO
n
NOP
T12
n + 1
DO
NOP
T11
NOP
T11
n + 2
DO
DO
n
Bank a,
Row b
ACT
T13
n + 1
n + 3
DO
DO
Indicates A Break in
Time Scale
NOP
t RP
T12
NOP
T12
n + 2
DO
NOP
T14
n + 3
DO
NOP
T13
NOP
T13
NOP
T15
Transitioning Data
Transitioning Data
Transitioning Data
NOP
T14
NOP
t RP
NOP
T16
Bank a,
Row b
ACT
Bank a,
T15
Row b
ACT
Don’t Care
Ta0
Don’t Care
NOP
Don’t Care
T17
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