MT41J64M16LA-15E:B TR Micron Technology Inc, MT41J64M16LA-15E:B TR Datasheet - Page 7
![IC DDR3 SDRAM 1GBIT 96FBGA](/photos/7/23/72317/mfg557-60-fbga_sml.jpg)
MT41J64M16LA-15E:B TR
Manufacturer Part Number
MT41J64M16LA-15E:B TR
Description
IC DDR3 SDRAM 1GBIT 96FBGA
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Specifications of MT41J64M16LA-15E:B TR
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
1G (64M x 16)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
96-FBGA
Organization
64Mx16
Density
1Gb
Address Bus
16b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
355mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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1Gb: x4, x8, x16 DDR3 SDRAM
List of Figures
Figure 113: Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 . . . . 165
Figure 114: Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4. . . . . . . . . . . . . 166
Figure 115: Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4. . . . . . . . . . . . . 166
Figure 116: Synchronous ODT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Figure 117: Synchronous ODT (BC4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
Figure 118: ODT During READs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
Figure 119: Asynchronous ODT Timing with Fast ODT Transition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
Figure 120: Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry . . . . 175
Figure 121: Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit. . . . . . 177
Figure 122: Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping . . . . . . . . . 179
Figure 123: Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping. . . . . . . . . 180
PDF: 09005aef826aa906/Source: 09005aef82a357c3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
7
1Gb_DDR3_LOF.fm - Rev. F 11/08 EN
©2006 Micron Technology, Inc. All rights reserved.
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