MT41J256M8JE-15E:A Micron Technology Inc, MT41J256M8JE-15E:A Datasheet - Page 161

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MT41J256M8JE-15E:A

Manufacturer Part Number
MT41J256M8JE-15E:A
Description
IC DDR3 SDRAM 2GBIT 82FBGA
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Datasheets

Specifications of MT41J256M8JE-15E:A

Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
2G (256M x 8)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
82-FBGA
Organization
256Mx8
Address Bus
18b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT41J256M8JE-15E:A
Manufacturer:
MICRON
Quantity:
985
Part Number:
MT41J256M8JE-15E:A
Manufacturer:
Micron Technology Inc
Quantity:
10 000
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
DQS to DQ output timing is shown in Figure 77 (page 162). The DQ transitions be-
tween valid data outputs must be within
DQS must also maintain a minimum HIGH and LOW time of
the READ preamble, the DQ balls either will be floating or terminated depending on the
status of the ODT signal.
Figure 78 (page 163) shows the strobe-to-clock timing during a READ. The crossing
point DQS, DQS# must transition within ±
out has no timing relationship to clock, only to DQS, as shown in Figure 78 (page 163).
Figure 78 (page 163) also shows the READ preamble and postamble. Typically, both
DQS and DQS# are High-Z to save power (V
DQS is driven LOW and DQS# is HIGH for
The READ postamble,
ing the READ postamble, DQS is driven LOW and DQS# is HIGH. When complete, the
DQ will either be disabled or will continue terminating depending on the state of the
ODT signal. Figure 83 (page 167) demonstrates how to measure
t
RPST, is one half clock from the last DQS, DQS# transition. Dur-
161
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DQSQ of the crossing point of DQS, DQS#.
t
t
DQSCK of the clock crossing point. The data
RPRE. This is known as the READ preamble.
DDQ
2Gb: x4, x8, x16 DDR3 SDRAM
). Prior to data output from the DRAM,
t
© 2006 Micron Technology, Inc. All rights reserved.
QSH and
t
RPST.
t
QSL. Prior to

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