MT41J256M8JE-15E:A Micron Technology Inc, MT41J256M8JE-15E:A Datasheet - Page 48

• Manufacturer Part Number: MT41J256M8JE-15E:A
• Description: IC DDR3 SDRAM 2GBIT 82FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M8JE-15E:A

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 82-FBGA
• Organization: 256Mx8
• Address Bus: 18b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications – DC and AC
DC Operating Conditions
Table 23: DC Electrical Characteristics and Operating Conditions
All voltages are referenced to V
Input Operating Conditions
Table 24: DC Electrical Characteristics and Input Conditions
All voltages are referenced to V
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
Parameter/Condition
Supply voltage
I/O supply voltage
Input leakage current
Any input 0V ≤ V
(All other pins not under test = 0V)
V
V
(All other pins not under test = 0V)
Parameter/Condition
V
V
Input reference voltage command/address bus
I/O reference voltage DQ bus
I/O reference voltage DQ bus in SELF REFRESH
Command/address termination voltage
(system level, not direct DRAM input)
REF
REFDQ
IN
IN
low; DC/commands/address busses
high; DC/commands/address busses
supply leakage current
= V
DD
/2 or V
IN
≤ V
REFCA
Notes:
Notes:
DD
= V
, V
REF
DD
/2
1. V
2. V
3. V
4. The minimum limit requirement is for testing purposes. The leakage current on the V
1. V
2. DC values are determined to be less than 20 MHz in frequency. DRAM must meet specifi-
3. V
pin 0V ≤ V
SS
SS
V
DC (0 Hz to 250 kHz) specifications. V
timing parameters.
pin should be minimal.
level. Externally generated peak noise (noncommon mode) on V
±1% × V
ceed ±2% of V
cations if the DRAM induces additional AC noise greater than 20 MHz in frequency.
level. Externally generated peak noise (noncommon mode) on V
±1% × V
exceed ±2% of V
DD
SSQ
DD
REF
REFCA(DC)
REFDQ(DC)
and V
.
and V
(see Table 24).
IN
DD
DD
≤ 1.1V
is expected to be approximately 0.5 × V
DDQ
DDQ
is expected to be approximately 0.5 × V
around the V
around the V
must track one another. V
may include AC noise of ±50mV (250 kHz to 20 MHz) in addition to the
REFCA(DC)
REFDQ(DC)
V
V
V
Symbol
REFDQ(DC)
REFCA(DC)
REFDQ(sr)
Symbol
V
V
V
V
I
V
TT
VREF
IH
IL
.
DDQ
DD
I
I
REFCA(DC)
REFDQ(DC)
.
48
See Table 25
0.49 × V
0.49 × V
value. Peak-to-peak AC noise on V
value. Peak-to-peak AC noise on V
1.425
1.425
Min
Electrical Specifications – DC and AC
Min
V
V
–2
–1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–
SS
SS
DD
DD
DD
and V
DDQ
2Gb: x4, x8, x16 DDR3 SDRAM
must be less than or equal to V
0.5 × V
DDQ
0.5 × V
0.5 × V
0.5 × V
Nom
Nom
1.5
1.5
n/a
n/a
–
–
DD
DD
must be at same level for valid AC
DDQ
and to track variations in the DC
and to track variations in the DC
DD
DD
DD
See Table 25
0.51 × V
0.51 × V
© 2006 Micron Technology, Inc. All rights reserved.
1.575
1.575
Max
Max
V
V
2
1
DD
DD
–
REFCA
REFDQ
DD
DD
REFCA
REFDQ
may not exceed
may not exceed
Units
should not ex-
Units Notes
should not
µA
µA
V
V
V
V
V
V
V
V
DD
. V
SS
Notes
1, 2
1, 2
1, 2
2, 3
=
4
4
5
REF