STM8S105K6U6 STMicroelectronics, STM8S105K6U6 Datasheet - Page 76

MCU 32KB FLASH EEPROM 32-VFQFPN

STM8S105K6U6

Manufacturer Part Number
STM8S105K6U6
Description
MCU 32KB FLASH EEPROM 32-VFQFPN
Manufacturer
STMicroelectronics
Series
STM8Sr
Datasheet

Specifications of STM8S105K6U6

Core Processor
STM8
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
25
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.95 V ~ 5.5 V
Data Converters
A/D 7x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
32-VFQFN, 32-VFQFPN
Processor Series
STM8S10x
Core
STM8
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
I2C, SPI, UART
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
25
Number Of Timers
8
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWSTM8
Development Tools By Supplier
STICE-SYS001
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 7 Channel
For Use With
497-10040 - EVAL KIT STM8S DISCOVERY497-10593 - KIT STARTER FOR STM8S207/8 SER
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10123
STM8S105K6U6
Electrical characteristics
10.3.4
76/127
(2)
small R
(3)
(4)
MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer.
The oscillator selection can be optimized in terms of supply current using a high quality resonator with
Data based on characterization results, not tested in production.
t
SU(HSE)
m
value. Refer to crystal manufacturer for more details
is the start-up time measured from the moment it is enabled (by software) to a stabilized 16
HSE oscillator critical g
g
R
L
C
Co: Shunt capacitance (see crystal specification)
C
g
Internal clock sources and timing characteristics
Subject to general operating conditions for V
High speed internal RC oscillator (HSI)
Symbol
f
mcrit
m
m
HSI
m
m
L1
: Notional inductance (see crystal specification)
: Notional resistance (see crystal specification)
: Notional capacitance (see crystal specification)
>> g
= C
= (2 × Π × f
L2
mcrit
Parameter
= C: Grounded external capacitance
Frequency
R m
C m
L m
Resonator
HSE
C O
)
2
× R
Figure 20: HSE oscillator circuit diagram
Table 34: HSI oscillator characteristics
m
m
(2Co + C)
equation
C L1
C L2
DocID14771 Rev 10
Conditions
2
Resonator
OSCOUT
DD
OSCIN
and T
A
.
Min
R F
g m
Consumption
control
f HSE to core
Typ
16
STM8
Max
STM8S105xx
Unit
MHz

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