MOSFET N-CH 40V 160A D2PAK-7

FDB016N04AL7

Manufacturer Part NumberFDB016N04AL7
DescriptionMOSFET N-CH 40V 160A D2PAK-7
ManufacturerFairchild Semiconductor
SeriesPowerTrench®
FDB016N04AL7 datasheet
 


Specifications of FDB016N04AL7

Input Capacitance (ciss) @ Vds11600pF @ 25VFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs1.6 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)40VCurrent - Continuous Drain (id) @ 25° C160A
Vgs(th) (max) @ Id3V @ 250µAGate Charge (qg) @ Vgs167nC @ 10V
Power - Max283WMounting TypeSurface Mount
Package / CaseTO-263-7, D²Pak (6 leads + Tab)Transistor PolarityN-Channel
Resistance Drain-source Rds (on)1.16 mOhmsForward Transconductance Gfs (max / Min)381 S
Drain-source Breakdown Voltage40 VContinuous Drain Current160 A
Power Dissipation283 WMaximum Operating Temperature+ 175 C
Mounting StyleSMD/SMTLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDB016N04AL7
N-Channel PowerTrench
40V, 306A, 1.6mW
Features
• R
= 1.16mW ( Typ.)@ V
DS(on)
GS
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R
DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 160A.
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
qJC
R
Thermal Resistance, Junction to Ambient
qJA
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. A1
®
MOSFET
Description
= 10V, I
= 80A
This N-Channel MOSFET is produced using Fairchild Semicon-
D
ductor’s adcanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
2
D
-PAK-7L
FDB Series with suffix - L7
o
T
= 25
C unless otherwise noted*
C
Parameter
o
- Continuous (T
= 25
C, Silicon Limited)
C
o
- Continuous (T
= 100
C, Silicon Limited)
C
o
- Continuous (T
= 25
C, Package Limited)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
December 2010
D(Pin4, tab)
G
(Pin1)
S(Pin2,3,5,6,7)
FDB016N04AL7
40
±20
306*
216*
160
(Note 1)
1224
(Note 2)
1350
(Note 3)
6.0
283
1.89
-55 to +175
300
Ratings
0.53
62.5
www.fairchildsemi.com
Units
V
V
A
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDB016N04AL7 Summary of contents

  • Page 1

    ... Thermal Characteristics Symbol R Thermal Resistance, Junction to Case qJC R Thermal Resistance, Junction to Ambient qJA ©2010 Fairchild Semiconductor Corporation FDB016N04AL7 Rev. A1 ® MOSFET Description = 10V 80A This N-Channel MOSFET is produced using Fairchild Semicon- D ductor’s adcanced PowerTrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

  • Page 2

    ... L = 3mH 30A 25V 25W, Starting £ 80A, di/dt £ 200A/ms, V £ Starting DSS 4. Pulse Test: Pulse width £ 300ms, Duty Cycle £ Essentially Independent of Operating Temperature Typical Characteristics FDB016N04AL7 Rev. A1 Package Reel Size D2-PAK-7L 330mm unless otherwise noted C Test Conditions I = 250mA 0V ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 100 C iss = oss = rss = *Notes 1MHz 0.1 0 Drain-Source Voltage [V] DS FDB016N04AL7 Rev. A1 Figure 2. Transfer Characteristics 1000 = V 10 8.0 V 7.0 V 6.0 V 5.0 V 100 4.5 V 4.0 V 3.5 V 3.0 V *Notes: 1. 250 m s Pulse Test Figure 4. Body Diode Forward Voltage ...

  • Page 4

    ... Figure 11. Unclamped Inductive Switching Capability 1000 (L)(I )/(1.3*RATED ¹ (L/R)ln[(I *R)/(1.3*RATED 100 10 o STARTING T = 150 0.0001 0. TIME IN AVALANCHE(ms) AV FDB016N04AL7 Rev. A1 (Continued) Figure 8. On-Resistance Variation vs. 2.00 1.75 1.50 1.25 1.00 *Notes 0. 1mA D 0.50 100 150 200 350 300 250 100 ...

  • Page 5

    ... Single pulse 0.001 -5 10 FDB016N04AL7 Rev. A1 Figure 12. Transient Thermal Response Curve - Rectangular Pulse Duration [sec *Notes (t) = 0.53 C/W Max Duty Factor ( www.fairchildsemi.com ...

  • Page 6

    ... FDB016N04AL7 Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDB016N04AL7 Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

  • Page 8

    ... Mechanical Dimensions FDB016N04AL7 Rev PAK-7L 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDB016N04AL7 Rev. A1 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...