FDB016N04AL7 Fairchild Semiconductor, FDB016N04AL7 Datasheet

MOSFET N-CH 40V 160A D2PAK-7

FDB016N04AL7

Manufacturer Part Number
FDB016N04AL7
Description
MOSFET N-CH 40V 160A D2PAK-7
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDB016N04AL7

Input Capacitance (ciss) @ Vds
11600pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.6 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
167nC @ 10V
Power - Max
283W
Mounting Type
Surface Mount
Package / Case
TO-263-7, D²Pak (6 leads + Tab)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.16 mOhms
Forward Transconductance Gfs (max / Min)
381 S
Drain-source Breakdown Voltage
40 V
Continuous Drain Current
160 A
Power Dissipation
283 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDB016N04AL7
Manufacturer:
FAIRCHILD
Quantity:
5 000
Part Number:
FDB016N04AL7
Manufacturer:
ON/安森美
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. A1
MOSFET Maximum Ratings
Thermal Characteristics
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 160A.
V
V
I
I
E
dv/dt
P
T
T
R
R
D
DM
FDB016N04AL7
N-Channel PowerTrench
40V, 306A, 1.6mW
Features
• R
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
• RoHS Compliant
J
L
DSS
GSS
AS
D
qJC
qJA
, T
Symbol
Symbol
R
STG
DS(on)
DS(on)
= 1.16mW ( Typ.)@ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
= 10V, I
D
T
= 80A
C
FDB Series with suffix - L7
= 25
D
Parameter
Parameter
- Continuous (T
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25
2
®
-PAK-7L
C
o
C unless otherwise noted*
= 25
MOSFET
o
C)
C
C
C
= 25
= 100
= 25
1
o
C
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
o
o
C, Silicon Limited)
C, Package Limited)
o
C, Silicon Limited)
(Pin1)
(Note 1)
(Note 2)
(Note 3)
G
S(Pin2,3,5,6,7)
D(Pin4, tab)
FDB016N04AL7
-55 to +175
Ratings
1224
1350
306*
216*
1.89
±20
160
283
300
0.53
62.5
6.0
40
December 2010
www.fairchildsemi.com
Units
W/
Units
o
V/ns
C/W
mJ
o
o
W
V
V
A
A
C
C
o
C

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FDB016N04AL7 Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance, Junction to Case qJC R Thermal Resistance, Junction to Ambient qJA ©2010 Fairchild Semiconductor Corporation FDB016N04AL7 Rev. A1 ® MOSFET Description = 10V 80A This N-Channel MOSFET is produced using Fairchild Semicon- D ductor’s adcanced PowerTrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... L = 3mH 30A 25V 25W, Starting £ 80A, di/dt £ 200A/ms, V £ Starting DSS 4. Pulse Test: Pulse width £ 300ms, Duty Cycle £ Essentially Independent of Operating Temperature Typical Characteristics FDB016N04AL7 Rev. A1 Package Reel Size D2-PAK-7L 330mm unless otherwise noted C Test Conditions I = 250mA 0V ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 100 C iss = oss = rss = *Notes 1MHz 0.1 0 Drain-Source Voltage [V] DS FDB016N04AL7 Rev. A1 Figure 2. Transfer Characteristics 1000 = V 10 8.0 V 7.0 V 6.0 V 5.0 V 100 4.5 V 4.0 V 3.5 V 3.0 V *Notes: 1. 250 m s Pulse Test Figure 4. Body Diode Forward Voltage ...

Page 4

... Figure 11. Unclamped Inductive Switching Capability 1000 (L)(I )/(1.3*RATED ¹ (L/R)ln[(I *R)/(1.3*RATED 100 10 o STARTING T = 150 0.0001 0. TIME IN AVALANCHE(ms) AV FDB016N04AL7 Rev. A1 (Continued) Figure 8. On-Resistance Variation vs. 2.00 1.75 1.50 1.25 1.00 *Notes 0. 1mA D 0.50 100 150 200 350 300 250 100 ...

Page 5

... Single pulse 0.001 -5 10 FDB016N04AL7 Rev. A1 Figure 12. Transient Thermal Response Curve - Rectangular Pulse Duration [sec *Notes (t) = 0.53 C/W Max Duty Factor ( www.fairchildsemi.com ...

Page 6

... FDB016N04AL7 Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDB016N04AL7 Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 8

... Mechanical Dimensions FDB016N04AL7 Rev PAK-7L 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDB016N04AL7 Rev. A1 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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