FDB016N04AL7 Fairchild Semiconductor, FDB016N04AL7 Datasheet - Page 4

• Manufacturer Part Number: FDB016N04AL7
• Description: MOSFET N-CH 40V 160A D2PAK-7
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB016N04AL7

• Input Capacitance (ciss) @ Vds: 11600pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 167nC @ 10V
• Power - Max: 283W
• Mounting Type: Surface Mount
• Package / Case: TO-263-7, D²Pak (6 leads + Tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.16 mOhms
• Forward Transconductance Gfs (max / Min): 381 S
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 160 A
• Power Dissipation: 283 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDB016N04AL7 Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Unclamped Inductive
1000
3000
1000
100
100
0.1
10
1.2
1.1
1.0
0.9
0.8
10
0.0001
1
1
-100
0.1
Operation in This Area
is Limited by R
If R = 0
t
If R ¹
t
STARTING T
AV
AV
vs. Temperature
-50
= (L)(I
= (L/R)ln[(I
*Notes:
T
t
V
0.01
Switching Capability
AV
J
1. T
2. T
3. Single Pulse
, Junction Temperature
DS
AS
, TIME IN AVALANCHE(ms)
, Drain-Source Voltage [V]
C
J
)/(1.3*RATED BV
1
= 175
J
= 25
0
AS
DS(on)
= 150
*R)/(1.3*RATED BV
o
C
o
C
o
C
50
1
STARTING T
DSS
10
100
- V
*Notes:
DD
1. V
2. I
DSS
100
[
)
J
D
o
GS
C
- V
= 25
= 1mA
150
]
100ms
100
1ms
10ms
DC
DD
= 0V
o
) +1]
100 200
m
C
s
10000
200
(Continued)
4
Figure 8. On-Resistance Variation vs.
2.00
1.75
1.50
1.25
1.00
0.75
0.50
350
300
250
200
150
100
Figure 10. Maximum Drain Current vs.
50
0
-100
25
-50
50
Temperature
Limited by package
T
T
J
C
, Junction Temperature
, Case Temperature
75
Case Temperature
0
100
50
125
100
[
o
*Notes:
C
1. V
2. I
[
]
o
C
D
GS
150
150
]
= 80A
= 10V
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175
200