DE275-501N16A IXYS RF, DE275-501N16A Datasheet
DE275-501N16A
Manufacturer Part Number
DE275-501N16A
Description
RF MOSFET, N CHANNEL, 500V, DE-275
Manufacturer
IXYS RF
Datasheet
1.DE275-501N16A.pdf
(4 pages)
Specifications of DE275-501N16A
Drain Source Voltage Vds
500V
Continuous Drain Current Id
16A
Power Dissipation Pd
590W
Operating Temperature Range
-55°C To +175°C
Rf Transistor Case
DE-275
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
P
P
R
R
Symbol
V
V
I
I
R
g
T
T
T
T
Weight
D25
DM
AR
GSS
DSS
N-Channel Enhancement Mode
Low Q
High dv/dt
Nanosecond Switching
J
JM
stg
fs
L
DSS
DGR
GS
GSM
AR
DC
DHS
DAMB
DSS
GS(th)
thJC
thJHS
DS(on)
g
and R
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
I
T
Derate 1.9W/°C above 25°C
T
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
V
1.6mm(0.063 in) from case for 10 s
S
S
J
J
c
c
c
c
j
c
c
GS
DS
GS
DS
GS
GS
DS
≤ I
= 0
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 V
= 0
= 15 V, I
= 15 V, I
DM
g
, di/dt ≤ 1 00A/µs, V
GS
, I
D
DSS
D
DC
D
D
G
= 3 ma
= 4 ma
, V
= 0.5I
= 0.5I
= 0.2Ω
T
T
J
J
DS
= 25°C
= 125°C
= 0
D25
D25
GS
, pulse test
= 1 MΩ
DD
≤ V
DSS
JM
,
Characteristic Values
T
J
= 25°C unless otherwise specified
min.
500
2.5
-55
-55
Maximum Ratings
typ.
175
300
10
2
>200
0.25
0.53
500
500
590
284
±20
±30
3.0
max.
±100
+175
+175
16
96
16
20
5
5.5
.38
50
1
V/ns
V/ns
C/W
C/W
mJ
W
W
W
V
V
V
V
A
A
A
mA
µA
nA
°C
°C
°C
°C
Ω
V
V
S
g
RF Power MOSFET
DE275-501N16A
GATE
Features
•
−
−
−
•
•
−
−
•
•
•
Advantages
•
•
•
SG1
Isolated Substrate
IXYS advanced low Q
Low gate charge and capacitances
Low R
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Optimized for RF and high speed
switching at frequencies to 100MHz
Easy to mount—no insulators needed
High power density
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
easier to drive
faster switching
V
I
R
P
D25
SG2
DSS
DC
DS(on)
DS(on)
=
=
=
=
g
process
SD1
590 W
500 V
0.4 Ω
SD2
16 A
DRAIN
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DE275-501N16A Summary of contents
Page 1
... ≤ DSS >200 590 284 3.0 0.25 0.53 Characteristic Values T = 25°C unless otherwise specified J min. typ. max. 500 2.5 ±100 10 -55 +175 175 -55 +175 300 2 DE275-501N16A RF Power MOSFET V = DSS I = D25 R = DS(on V/ns GATE V/ SG1 SG2 W Features • C/W Isolated Substrate − ...
Page 2
... Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. max. 0.3 1800 , 150 Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. max 1.5 200 0.6 4 4,891,686 4,931,844 5,017,508 5,187,117 5,237,481 5,486,715 DE275-501N16A RF Power MOSFET Ω µC A ...
Page 3
... 275-501N16A Capacitances vs Vds DE275-501N16A RF Power MOSFET Ciss Coss Crss 350 400 450 500 ...
Page 4
... D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M) .ENDS 10 DRAIN 4 Lg Doff Roff D1crs D2crs Ron 2 Don 7 30 SOURCE Figure 1 DE-SERIES SPICE Model DE275-501N16A RF Power MOSFET , L and the DS(ON) , and reverse transfer OSS Dcos Rds Ls Doc #9200-0222 Rev 3 © 2003 IXYS RF ...