DE275-201N25A IXYS RF, DE275-201N25A Datasheet
DE275-201N25A
Manufacturer Part Number
DE275-201N25A
Description
MOSFET, N, RF, DE275
Manufacturer
IXYS RF
Datasheet
1.DE275-201N25A.pdf
(3 pages)
Specifications of DE275-201N25A
Drain Source Voltage Vds
200V
Continuous Drain Current Id
25A
Power Dissipation Max
590W
Operating Temperature Range
-55°C To +175°C
Rf Transistor Case
DE275
No. Of Pins
6
Transistor Type
RF MOSFET
Package / Case
DE-275
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
P
P
R
R
Symbol
V
V
I
I
R
g
T
T
T
T
Weight
D25
DM
AR
GSS
DSS
N-Channel Enhancement Mode
Low Q
High dv/dt
Nanosecond Switching
J
JM
stg
fs
L
DSS
DGR
GS
GSM
AR
DC
DHS
DAMB
DSS
GS(th)
thJC
thJHS
DS(on)
g
and R
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
I
T
Derate 1.9W/°C above 25°C
T
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
V
1.6mm(0.063 in) from case for 10 s
S
S
J
J
c
c
c
c
j
c
c
GS
DS
GS
DS
GS
GS
DS
≤ I
= 0
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 V
= 0
= 15 V, I
= 15 V, I
DM
g
, di/dt ≤ 1 00A/µs, V
GS
, I
D
DSS
D
DC
D
D
G
= 3 ma
= 4 ma
, V
= 0.5I
= 0.5I
= 0.2Ω
T
T
J
J
DS
= 25°C
= 125°C
= 0
D25
D25
GS
, pulse test
= 1 MΩ
DD
≤ V
DSS
JM
,
Characteristic Values
T
J
= 25°C unless otherwise specified
min.
200
2.5
-55
-55
Maximum Ratings
typ.
175
300
18
2
>200
0.25
0.53
200
200
150
590
284
±20
±30
3.0
max.
±100
+175
+175
25
25
20
5
5.5
.08
50
1
V/ns
V/ns
C/W
C/W
mJ
W
W
W
V
V
V
V
A
A
A
mA
µA
nA
°C
°C
°C
°C
Ω
V
V
S
g
RF Power MOSFET
DE275-201N25A
GATE
Features
•
−
−
−
•
•
−
−
•
•
•
Advantages
•
•
•
SG1
Isolated Substrate
IXYS advanced low Q
Low gate charge and capacitances
Low R
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Optimized for RF and high speed
switching at frequencies to 100MHz
Easy to mount—no insulators needed
High power density
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
easier to drive
faster switching
V
I
R
P
D25
SG2
DSS
DC
DS(on)
DS(on)
=
=
=
=
g
process
SD1
0.08 Ω
590 W
200 V
SD2
25 A
DRAIN
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DE275-201N25A Summary of contents
Page 1
... ≤ DSS >200 590 284 3.0 0.25 0.53 Characteristic Values T = 25°C unless otherwise specified J min. typ. max. 200 2.5 ±100 18 -55 +175 175 -55 +175 300 2 DE275-201N25A RF Power MOSFET V = DSS I = D25 R = DS(on V/ns GATE V/ SG1 SG2 W Features • C/W Isolated Substrate − ...
Page 2
... Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. max. 0.3 2500 , 250 Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. max. 25 150 JM 2.0 300 4,891,686 4,931,844 5,017,508 5,187,117 5,237,481 5,486,715 DE275-201N25A RF Power MOSFET Ω ...
Page 3
... D3 D (IS=.5F CJO=300P BV=500 M=.3 VJ=.4 TT=400N RS=10M) .ENDS 10 DRAIN 4 Lg Doff Roff D1crs D2crs Ron 2 Don 7 30 SOURCE Figure 1 DE-SERIES SPICE Model DE275-201N25A RF Power MOSFET , L and the DS(ON) , and reverse transfer OSS Dcos Rds Ls Doc #9200-0260 Rev 2 © 2003 IXYS RF ...