IGBT,NPT,TO-3PN

FGA25N120ANTD

Manufacturer Part NumberFGA25N120ANTD
DescriptionIGBT,NPT,TO-3PN
ManufacturerFairchild Semiconductor
FGA25N120ANTD datasheet
 

Specifications of FGA25N120ANTD

Transistor TypeIGBTDc Collector Current50A
Collector Emitter Voltage Vces2.5VPower Dissipation Max312W
Collector Emitter Voltage V(br)ceo1.2kVOperating Temperature Range-55°C To +150°C
Transistor CaseRoHS CompliantPower Dissipation Pd312W
Rohs CompliantYes  
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FGA25N120ANTD/FGA25N120ANTD_F109
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: V
CE(sat), typ
@ I
= 25A and T
= 25°C
C
C
• Low switching loss: E
= 0.96mJ
off, typ
@ I
= 25A and T
= 25°C
C
C
• Extremely enhanced avalanche capability
G C E
Absolute Maximum Ratings
Symbol
V
Collector-Emitter Voltage
CES
V
Gate-Emitter Voltage
GES
I
Collector Current
C
Collector Current
I
Pulsed Collector Current
CM
I
Diode Continuous Forward Current
F
I
Diode Maximum Forward Current
FM
P
Maximum Power Dissipation
D
Maximum Power Dissipation
T
Operating Junction Temperature
J
T
Storage Temperature Range
stg
T
Maximum Lead Temp. for soldering
L
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case for IGBT
θJC
R
Thermal Resistance, Junction-to-Case for Diode
θJC
R
Thermal Resistance, Junction-to-Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
= 2.0V
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching appli-
cation such as induction heating, microwave oven, etc.
TO-3PN
Description
@ T
= 25°C
C
@ T
= 100°C
C
(Note 1)
@ T
= 100°C
C
@ T
= 25°C
C
@ T
= 100°C
C
Parameter
1
u
July, 2007
C
C
G
G
E
E
FGA25N120ANTD
Units
1200
V
± 20
V
50
A
25
A
90
A
25
A
150
A
312
W
125
W
°C
-55 to +150
°C
-55 to +150
°C
300
Typ.
Max.
Units
°C/W
--
0.4
°C/W
--
2.0
°C/W
--
40
www.fairchildsemi.com
tm

FGA25N120ANTD Summary of contents

  • Page 1

    ... Thermal Resistance, Junction-to-Case for Diode θJC R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction = 2.0V and switching performances, high avalanche ruggedness and easy parallel operation ...

  • Page 2

    ... Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 Package Reel Size Tape Width TO- 25°C unless otherwise noted C Test Conditions CES ...

  • Page 3

    ... Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Cur- rr rent Q Diode Reverse Recovery Charge rr FGA25N120ANTD / FGA25N120ANTD_F109 Rev 25°C unless otherwise noted C Test Conditions I = 25A T = 25° 125° 25A T = 25°C ...

  • Page 4

    ... Collector-Emitter Voltage, V Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 Common Emitter V = 15V GE 2.5 2.0 1 Case Temperature, T Figure 5. Saturation Voltage vs 40A 25A 12. Gate-Emitter Voltage, V FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 Figure 2. Typical Saturation Voltage 120 10V 100 [V] CE Figure 4. Saturation Voltage vs 40A 25A ...

  • Page 5

    ... Gate Resistance, R Figure 11. Turn-On Characteristics vs. Collector Current Common Emitter V = ± 15V Ω ° 125 ° 100 Collector Current, I FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 (Continued) Figure 8. Turn-On Characteristics vs. Gate Common Emitter 1MHz ° 100 10 10 [V] CE Figure 10. Switching Loss vs. Gate Resistance td(off Ω ...

  • Page 6

    ... C C Curves must be derated linearly with increase in temperature 0.01 0 Collector - Emitter Voltage, V Figure 17. Transient Thermal Impedance of IGBT 0 0.2 0.1 0. 0.02 0. FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 (Continued) Figure 14. Gate Charge Characteristics 16 14 Eon 12 10 Eoff [A] C Figure 16. Turn-Off SOA 100 50 µ s 100 µ ...

  • Page 7

    ... 0.1 0.0 0.4 0.8 1.2 Forward Voltage , V Figure 20. Stored Charge 4000 3000 di/dt = 200A/ µ s 2000 di/dt = 100A/ 1000 Forward Current , I FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2 (Continued) Figure 19. Reverse Recovery Current ° 125 ° ° 1.6 2.0 [V] F Figure 21. Reverse Recovery Time 300 200 µ ...

  • Page 8

    ... Mechanical Dimensions (continued) FGA25N120ANTD /FGA25N!20ANTD_F109 Rev. B2 TO-3PN 9 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...