FGA25N120ANTD Fairchild Semiconductor, FGA25N120ANTD Datasheet - Page 7

• Manufacturer Part Number: FGA25N120ANTD
• Description: IGBT,NPT,TO-3PN
• Manufacturer: Fairchild Semiconductor

Specifications of FGA25N120ANTD

• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Max: 312W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Power Dissipation Pd: 312W
• Rohs Compliant: Yes

FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
Typical Performance Characteristics
Figure 18. Forward Characteristics
Figure 20. Stored Charge
0.1
4000
3000
2000
1000
50
10
1
0.0
0
T
0.4
J
5
= 125
Forward Voltage , V
°
C
Forward Current , I
0.8
di/dt = 200A/
10
T
1.2
J
µ
= 25
s
di/dt = 100A/
15
°
F
C
F
[V]
T
T
[A]
1.6
C
C
= 125
= 25
µ
s
20
°
°
C
C
2.0
25
(Continued)
7
Figure 19. Reverse Recovery Current
Figure 21. Reverse Recovery Time
300
200
100
30
25
20
15
10
5
0
0
5
di/dt = 100A/
5
di/dt = 200A/
Forward Current , I
Forward Current , I
10
10
µ
s
µ
di/dt = 200A/
s
di/dt = 100A/
15
15
F
µ
F
[A]
s
[A]
µ
s
20
20
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25
25