FGA25N120ANTD Fairchild Semiconductor, FGA25N120ANTD Datasheet - Page 3

• Manufacturer Part Number: FGA25N120ANTD
• Description: IGBT,NPT,TO-3PN
• Manufacturer: Fairchild Semiconductor

Specifications of FGA25N120ANTD

• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Max: 312W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Power Dissipation Pd: 312W
• Rohs Compliant: Yes

FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
Electrical Characteristics of DIODE
V
t
I
Q
Symbol
rr
rr
FM
rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Cur-
rent
Diode Reverse Recovery Charge
Parameter
I
dI/dt = 200 A/µs
I
F
F
= 25A
= 25A
T
C
= 25°C unless otherwise noted
Test Conditions
3
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
3130
4650
235
300
2.0
2.1
27
31
Max.
4700
350
3.0
40
--
--
--
--
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Units
nC
ns
V
A