FDMC8554 Fairchild Semiconductor, FDMC8554 Datasheet

MOSFET N-CH 20V 16.5A POWER33

FDMC8554

Manufacturer Part Number
FDMC8554
Description
MOSFET N-CH 20V 16.5A POWER33
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC8554

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 mOhm @ 16.5A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
16.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 10V
Input Capacitance (ciss) @ Vds
3380pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power33
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
62 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16.5 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMC8554TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC8554
Manufacturer:
FAIRCHILD
Quantity:
15 000
Part Number:
FDMC8554
Manufacturer:
FAIRCHILD/ON
Quantity:
20 000
Company:
Part Number:
FDMC8554
Quantity:
6 000
©2007 Fairchild Semiconductor Corporation
FDMC8554 Rev.C
FDMC8554
N-Channel Power Trench
20V, 16.5A, 5mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
θJC
θJA
Max r
Max r
Low Profile - 1mm max in a MicroFET 3.3x3.3 mm
RoHS Compliant
, T
Symbol
Device Marking
5
STG
FDMC8554
DS(on)
DS(on)
6
7
= 5mΩ at V
= 6.4mΩ at V
8
Bottom
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
4
GS
3
GS
= 10V, I
2
= 4.5V, I
FDMC8554
Power 33
1
-Continuous (Silicon limited)
-Pulsed
-Continuous
Device
D
= 16.5A
D
= 14A
T
D
A
= 25°C unless otherwise noted
D
Parameter
D
D
®
Power 33
Package
Top
MOSFET
S
1
S
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench process.
It has been optimized for switching performance and ultra low
rdson.
Application
T
T
T
T
T
S
C
C
C
Synchronous rectifier
ORing FET
POL rectifier
A
A
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
G
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
5
6
7
8
Tape Width
8mm
-55 to +150
Ratings
16.5
16.5
±20
2.0
20
72
36
41
60
3
February 2007
www.fairchildsemi.com
3000 units
Quantity
4
3
2
1
Units
°C/W
G
S
S
S
°C
W
V
V
A
tm

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FDMC8554 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC8554 FDMC8554 ©2007 Fairchild Semiconductor Corporation FDMC8554 Rev.C ® MOSFET General Description = 16.5A This N-Channel MOSFET is a rugged gate version of D Fairchild Semiconductor‘s advanced Power Trench process. ...

Page 2

... Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes determined with the device mounted on a 1in θJA the user's board design. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDMC8554 Rev 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to 25°C ...

Page 3

... T , JUNCTION TEMPERATURE J Figure 3. Normalized On- Resistance vs Junction Temperature 100 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMC8554 Rev 25°C unless otherwise noted 4. 3.5V GS µ 16. 10V 100 125 150 ( 100 150 ...

Page 4

... Figure 9. Unclamped Inductive Switching Capability 100 r LIMITED DS(on SINGLE PULSE 0 MAX RATED =135 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMC8554 Rev 25°C unless otherwise noted J 5000 = 10V DD 1000 V = 15V 1ms 10ms 100ms 1s 10s DC ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.002 - FDMC8554 Rev 25°C unless otherwise noted J SINGLE PULSE 135 C/W θ RECTANGULAR PULSE DURATION(s) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θ www.fairchildsemi.com ...

Page 6

... FDMC8554 Rev.C 6 www.fairchildsemi.com ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDMC8554 Rev.C OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ ...

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