FDMC8554 Fairchild Semiconductor, FDMC8554 Datasheet - Page 4

• Manufacturer Part Number: FDMC8554
• Description: MOSFET N-CH 20V 16.5A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC8554

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 16.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 3380pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 62 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16.5 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMC8554TR

FDMC8554 Rev.C
Typical Characteristics
0.01
100
0.1
10
10
10
40
8
6
4
2
0
1
1
Figure 7. Gate Charge Characteristics
0.01
10
0
-2
r
I
DS(on)
D
Figure 9. Unclamped Inductive
Figure 11. Forward Bias Safe
SINGLE PULSE
T
R
T
= 16.5A
J
A
θ
JA
= MAX RATED
= 25
LIMITED
V
=135
DS
10
10
Switching Capability
O
, DRAIN to SOURCE VOLTAGE (V)
C
-1
t
O
0.1
AV
C/W
Q
Operating Area
g
, TIME IN AVALANCHE(ms)
, GATE CHARGE(nC)
T
J
= 125
20
10
0
V
o
C
DD
1
= 5V
V
DD
T
30
10
J
= 15V
1
= 25°C unless otherwise noted
T
J
= 25
10
40
o
V
10
C
DD
2
1s
100ms
10s
DC
= 10V
1ms
10ms
100
50
10
3
4
1000
5000
300
100
100
0.5
80
60
40
20
Figure 10. Maximum Continuous Drain
10
0
1
10
0.1
25
Figure 12. Single Pulse Maximum
Current vs Ambient Temperature
-3
Figure 8. Capacitance vs Drain
Limited by Package
R
SINGLE PULSE
R
f = 1MHz
V
θ
θ
GS
JC
JA
=135
10
= 0V
= 3
V
DS
-2
50
V
Power Dissipation
to Source Voltage
o
O
T
C/W
GS
C/W
, DRAIN TO SOURCE VOLTAGE (V)
C
, CASE TEMPERATURE
t, PULSE WIDTH (s)
= 10V
10
-1
75
1
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
10
A
I = I
V
= 25
0
V
GS
GS
25
100
o
= 4.5V
C
= 10V
10
o
C DERATE PEAK
150 T
---------------------- -
1
125
C
C
(
C
–
o
oss
rss
C
iss
www.fairchildsemi.com
125
)
A
10
10
2
20
150
10
3