FDMC8554 Fairchild Semiconductor, FDMC8554 Datasheet - Page 2

• Manufacturer Part Number: FDMC8554
• Description: MOSFET N-CH 20V 16.5A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC8554

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 16.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 3380pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 62 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16.5 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMC8554TR

FDMC8554 Rev.C
Notes:
1: R
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
iss
oss
rss
g
∆T
∆T
g(TOT)
g(TOT)
gs
gd
rr
the user's board design.
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 4.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 60°C/W when mounted on
a 1 in
T
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
2
pad of 2 oz copper
= 25°C unless otherwise noted
V
V
V
V
f = 1MHz
f = 1MHz
V
I
V
V
V
V
V
I
I
I
V
V
V
D
F
D
D
DD
GS
DD
GS
GS
GS
GS
DS
DS
GS
DS
GS
GS
= 16.5A, di/dt = 100A/µs
= 250µA, referenced to 25°C
= 250µA, V
= 250µA, referenced to 25°C
= 10V, V
= 10V, I
= 10V, R
= 10V, I
= 10V, I
= 5V, I
= 0V, I
= 16V,
= 0V
= V
= 10V, I
= 4.5V, I
= ±20V, V
2
DS
Test Conditions
, I
S
D
D
D
D
D
= 16.5A
D
GS
GEN
= 16.5A
GS
= 16.5A
= 16.5A
D
= 16.5A, T
DS
= 16.5A
= 250µA
= 14A
= 0V,
= 0V
= 0V
= 6Ω
T
J
= 125°C
(Note 2)
J
= 125°C
θJC
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
is guaranteed by design while R
Min
1.0
20
2540
795
510
0.8
15.7
1.2
8.5
Typ
31
22
13
10
32
44
24
10
-6.1
1.8
3.6
4.6
5.4
7
62
3380
1060
±100
Max
765
1.3
100
24
20
51
14
62
34
47
33
θCA
3.0
5.0
6.4
7.1
www.fairchildsemi.com
1
is determined by
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
nC
nC
nC
nC
µA
nA
ns
ns
ns
ns
ns
Ω
V
V
V
S