FQPF6N80C Fairchild Semiconductor, FQPF6N80C Datasheet - Page 3

• Manufacturer Part Number: FQPF6N80C
• Description: MOSFET N-CH 800V 5.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF6N80C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 2.75A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1310pF @ 25V
• Power - Max: 51W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5.4 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 51000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5.5A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 2.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
1500
1200
900
600
300
10
10
10
10
6
5
4
3
2
1
0
10
0
-1
-2
1
0
10
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom : 5.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
3
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
C
C
C
rss
oss
iss
6
V
GS
= 10V
C
C
C
iss
oss
rss
= C
= C
= C
10
10
gs
gd
※ Notes :
ds
※ Note : T
9
+ C
1
1. 250 μ s Pulse Test
2. T
1
+ C
V
gd
※ Notes ;
GS
C
gd
1. V
2. f = 1 MHz
= 25 ℃
(C
= 20V
ds
GS
J
= shorted)
= 25℃
= 0 V
12
10
10
10
10
10
10
12
10
-1
-1
1
0
1
0
8
6
4
2
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation with Source Current
0.4
25
5
150℃
o
C
4
150
V
V
Q
and Temperature
GS
SD
o
0.6
G
C
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
V
, Total Gate Charge [nC]
V
DS
DS
25℃
V
= 640V
10
DS
= 400V
= 160V
0.8
6
15
-55
1.0
o
C
※ Note : I
※ Notes :
1. V
2. 250μ s Pulse Test
※ Notes :
8
1. V
2. 250 μ s Pulse Test
GS
D
20
= 0V
DS
= 6.0A
1.2
= 50V
Rev. A, June 2003
10
1.4
25