FQPF6N80C Fairchild Semiconductor, FQPF6N80C Datasheet - Page 4

• Manufacturer Part Number: FQPF6N80C
• Description: MOSFET N-CH 800V 5.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF6N80C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 2.75A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1310pF @ 25V
• Power - Max: 51W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5.4 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 51000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5.5A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 2.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9-1. Maximum Safe Operating Area
6
5
4
3
2
1
0
10
10
10
10
10
25
Figure 7. Breakdown Voltage Variation
-1
-2
1.2
1.1
1.0
0.9
0.8
2
1
0
10
-100
0
Figure 10. Maximum Drain Current
50
-50
vs Case Temperature
V
Operation in This Area
is Limited by R
DS
T
vs Temperature
, Drain-Source Voltage [V]
C
T
, Case Temperature [ ℃ ]
for FQP6N80C
J
, Junction Temperature [
10
0
1
75
DS(on)
50
100
DC
1. T
2. T
3. Single Pulse
Notes :
(Continued)
10
C
J
100
100 ms
= 25
= 150
2
o
C]
10 ms
※ Notes :
o
125
C
o
1. V
2. I
C
1 ms
D
GS
= 250 μ A
150
= 0 V
100 s
150
200
10
3
Figure 9-2. Maximum Safe Operating Area
10
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
-1
-2
2
1
0
10
0
Figure 8. On-Resistance Variation
-50
V
Operation in This Area
is Limited by R
DS
T
for FQPF6N80C
, Drain-Source Voltage [V]
J
vs Temperature
, Junction Temperature [
10
0
1
DS(on)
50
DC
1. T
2. T
3. Single Pulse
Notes :
100 ms
100
10
C
J
= 25
= 150
o
2
10 ms
C]
o
C
o
C
※ Notes :
1 ms
1. V
2. I
150
D
GS
100 s
= 3.0 A
= 10 V
10 s
200
Rev. A, June 2003
10
3