FQPF6N80C Fairchild Semiconductor, FQPF6N80C Datasheet - Page 8

• Manufacturer Part Number: FQPF6N80C
• Description: MOSFET N-CH 800V 5.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF6N80C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 2.75A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1310pF @ 25V
• Power - Max: 51W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5.4 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 51000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5.5A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 2.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Package Dimensions
[2.54
2.54TYP
1.27
0.20
0.10
]
ø3.60
10.00
9.90
(8.70)
0.20
0.10
0.20
[2.54
1.52
0.80
2.54TYP
0.10
0.20
0.10
TO-220
]
0.50
+0.10
–0.05
Dimensions in Millimeters
2.40
4.50
1.30
+0.10
–0.05
Rev. A, June 2003
0.20
0.20