FQPF6N80C Fairchild Semiconductor, FQPF6N80C Datasheet - Page 5

• Manufacturer Part Number: FQPF6N80C
• Description: MOSFET N-CH 800V 5.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF6N80C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 2.75A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1310pF @ 25V
• Power - Max: 51W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5.4 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 51000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5.5A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 2.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 11-2. Transient Thermal Response Curve for FQPF6N80C
1 0
1 0
1 0
1 0
1 0
1 0
Figure 11-1. Transient Thermal Response Curve for FQP6N80C
- 1
- 2
- 1
- 2
1 0
1 0
0
0
- 5
- 5
D = 0 .5
0 .0 1
D = 0 . 5
0 . 0 2
0 . 0 1
0 .0 5
0 .0 2
0 . 0 5
0 . 2
0 .2
0 .1
0 . 1
(Continued)
1 0
1 0
s in g le p u ls e
- 4
- 4
s in g le p u ls e
t
t
1
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
1 0
1 0
- 3
- 3
1 0
1 0
- 2
- 2
※ N o t e s :
1 0
1 0
※ N o t e s :
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
- 1
- 1
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
P
P
DM
DM
θ J C
J M
θ J C
J M
( t ) = 0 . 7 9 ℃ / W M a x .
- T
( t ) = 2 . 4 5 ℃ / W M a x .
- T
C
C
= P
= P
t
t
1
1
D M
t
1 0
1 0
t
2
2
D M
* Z
0
0
* Z
1
/ t
θ J C
1
2
/ t
θ J C
( t )
2
( t )
1 0
1 0
1
1
Rev. A, June 2003