HUF76407D3ST Fairchild Semiconductor, HUF76407D3ST Datasheet - Page 2

• Manufacturer Part Number: HUF76407D3ST
• Description: MOSFET N-CH 60V 12A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76407D3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 92 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 38W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.077 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 11 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Electrical Specifications
Source to Drain Diode Specifications
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (V
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
SWITCHING SPECIFICATIONS (V
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
PARAMETER
PARAMETER
T
GS
GS
C
= 25
= 4.5V)
= 10V)
SYMBOL
SYMBOL
V
o
r
Q
BV
t
t
Q
DS(ON)
C, Unless Otherwise Specified
t
d(OFF)
t
d(OFF)
C
C
GS(TH)
Q
I
R
R
C
I
d(ON)
t
d(ON)
t
g(TOT)
Q
Q
Q
V
GSS
t
t
DSS
OFF
OFF
g(TH)
OSS
ON
ON
RSS
θ JC
θ JA
g(5)
t
ISS
DSS
t
t
t
t
SD
RR
gs
gd
rr
r
r
f
f
I
I
V
V
V
V
I
I
I
TO-251, TO-252
V
V
(Figures 15, 21, 22)
V
V
R
(Figures 16, 21, 22)
V
V
V
V
f = 1MHz
(Figure 13)
I
I
I
I
D
D
D
D
D
SD
SD
SD
SD
DS
DS
GS
GS
DD
GS
DD
GS
GS
GS
GS
DS
GS
= 250 µ A, V
= 250 µ A, V
= 13A, V
= 8A, V
= 8A, V
=8A
= 3A
= 8A, dI
= 8A, dI
= 55V, V
= 50V, V
= 25V, V
= ± 16V
= V
= 30V, I
= 4.5V, R
= 30V, I
= 10V,
= 0V to 10V
= 0V to 5V
= 0V to 1V
= 32 Ω
DS
GS
GS
, I
GS
SD
SD
D
D
D
GS
GS
= 5V (Figure 9)
= 4.5V (Figure 9)
GS
GS
GS
GS
= 10V (Figures 9, 10)
= 8A
= 13A
/dt = 100A/µs
/dt = 100A/µs
TEST CONDITIONS
= 250 µ A (Figure 11)
TEST CONDITIONS
= 0V
= 0V, T
= 0V,
= 0V (Figure 12)
= 0V , T
= 32 Ω
V
I
I
(Figures 14, 19, 20)
D
g(REF)
C
DD
C
= 8A,
= 150
= -40
= 30V,
= 1.0mA
o
o
C
C (Figure 12)
MIN
MIN
60
55
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HUF76407D3, HUF76407D3S Rev. B
0.077
0.095
0.107
TYP
0.36
TYP
105
350
105
9.4
5.2
1.2
2.5
22
39
32
43
45
23
8
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.092
0.107
0.117
MAX
± 100
MAX
3.94
11.3
0.43
1.25
250
100
170
132
159
6.2
1.0
92
56
66
3
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
UNITS
o
o
C/W
C/W
nC
nC
nC
nC
nC
µ A
µ A
nA
pF
pF
pF
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Ω
Ω
Ω
V
V
V
V
V