HUF76407D3ST Fairchild Semiconductor, HUF76407D3ST Datasheet - Page 4

• Manufacturer Part Number: HUF76407D3ST
• Description: MOSFET N-CH 60V 12A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76407D3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 92 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 38W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.077 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 11 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
15
12
100
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
0.1
9
6
3
0
10
1
150
120
2
90
60
T
1
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
FIGURE 7. TRANSFER CHARACTERISTICS
J
2
DD
= 175
SINGLE PULSE
T
T
I
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
D
J
J
= 15V
VOLTAGE AND DRAIN CURRENT
= MAX RATED T
= 25
= 3A
o
C
V
V
o
C
DS
GS
V
GS
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
4
, GATE TO SOURCE VOLTAGE (V)
I
DS(ON)
D
3
= 12A
T
I
D
J
= -55
= 5A
C
10
= 25
o
C
o
C
6
T
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
C
= 25
4
o
(Continued)
C
8
100µs
10ms
1ms
100
200
5
10
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
15
12
100
9
6
3
0
2.5
2.0
1.5
1.0
0.5
10
0.001
1
0
-80
V
V
FIGURE 8. SATURATION CHARACTERISTICS
GS
GS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
STARTING T
If R = 0
t
If R ≠ 0
t
AV
AV
= 5V
= 10V
T
CAPABILITY
c
RESISTANCE vs JUNCTION TEMPERATURE
-40
= (L)(I
= (L/R)ln[(I
= 25
V
DS
T
o
0.01
AS
J
C
1
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
J
t
)/(1.3*RATED BV
AV
= 150
0
AS
, TIME IN AVALANCHE (ms)
*R)/(1.3*RATED BV
o
C
40
0.1
2
DSS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
HUF76407D3, HUF76407D3S Rev. B
80
STARTING T
- V
V
DD
DSS
GS
120
)
- V
= 10V, I
o
C)
1
3
DD
V
V
J
) +1]
GS
V
GS
160
= 25
GS
D
= 12A
= 4V
= 3.5V
= 3V
o
C
200
10
4