HUF76407D3ST Fairchild Semiconductor, HUF76407D3ST Datasheet - Page 6

• Manufacturer Part Number: HUF76407D3ST
• Description: MOSFET N-CH 60V 12A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76407D3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 92 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 38W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.077 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 11 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Test Circuits and Waveforms
VARY t
REQUIRED PEAK I
0V
V
GS
I
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
g(REF)
P
FIGURE 21. SWITCHING TIME TEST CIRCUIT
TO OBTAIN
FIGURE 19. GATE CHARGE TEST CIRCUIT
V
t
GS
P
V
AS
GS
R
GS
R
V
G
GS
V
DS
V
DUT
DS
V
I
R
AS
DS
L
DUT
R
DUT
L
0.01Ω
L
+
-
V
DD
+
-
+
-
V
V
DD
DD
I
V
g(REF)
0
0
DD
V
0
0
0
V
V
GS
GS
DS
10%
V
= 1V
GS
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
FIGURE 22. SWITCHING TIME WAVEFORM
FIGURE 20. GATE CHARGE WAVEFORMS
Q
t
d(ON)
90%
Q
gs
g(TH)
50%
t
ON
10%
t
r
I
AS
Q
PULSE WIDTH
Q
V
g(5)
DS
gd
t
P
Q
g(TOT)
BV
t
AV
HUF76407D3, HUF76407D3S Rev. B
DSS
V
GS
= 5V
t
d(OFF)
90%
V
t
OFF
DS
50%
t
f
10%
V
GS
V
90%
DD
= 10V