HUF76407D3ST Fairchild Semiconductor, HUF76407D3ST Datasheet - Page 3

• Manufacturer Part Number: HUF76407D3ST
• Description: MOSFET N-CH 60V 12A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76407D3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 92 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 38W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.077 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 11 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.2
1.0
0.8
0.6
0.4
0.2
200
100
10
0.01
0
0.1
0
10
2
1
10
-5
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
TEMPERATURE
25
T
C
50
, CASE TEMPERATURE (
10
SINGLE PULSE
10
75
-4
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
V
GS
= 5V
125
o
C)
FIGURE 4. PEAK CURRENT CAPABILITY
10
10
-3
150
-3
t, RECTANGULAR PULSE DURATION (s)
175
t, PULSE WIDTH (s)
10
10
-2
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
15
10
5
0
25
CASE TEMPERATURE
V
50
GS
10
10
= 4.5V
-1
-1
T
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
75
V
J
GS
= P
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
C
I = I
= 10V
DM
100
= 25
25
x Z
HUF76407D3, HUF76407D3S Rev. B
o
C
θJC
10
10
o
P
1
C DERATE PEAK
DM
0
/t
0
125
x R
2
175 - T
θJC
o
150
C)
t
+ T
1
C
t
150
C
2
175
10
10
1
1