FDD8870 Fairchild Semiconductor, FDD8870 Datasheet - Page 2

• Manufacturer Part Number: FDD8870
• Description: MOSFET N-CH 30V 160A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8870

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 118nC @ 10V
• Input Capacitance (ciss) @ Vds: 5160pF @ 15V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0039 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Package current limitation is 35A.
2: Starting T
:
B
I
I
V
r
C
C
C
R
Q
Q
Q
Q
Q
Q
t
t
t
t
t
t
V
t
Q
DSS
GSS
ON
d(ON)
r
d(OFF)
f
OFF
rr
DS(ON)
GS(TH)
VDSS
SD
ISS
OSS
RSS
G
g(TOT)
g(5)
g(TH)
gs
gs2
gd
RR
F
Symbol
Device Marking
FDD8870
FDU8870
F
F
J
= 25°C, L = 1.77mH, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
AS
Parameter
= 28A, V
FDD8870
FDU8870
Device
(V
DD
GS
= 27V, V
= 10V)
T
C
= 25°C unless otherwise noted
GS
= 10V.
TO-252AA
TO-251AA
Package
V
V
V
I
I
V
V
V
I
I
I
T
V
f = 1MHz
V
V
V
V
I
I
I
D
D
D
D
SD
SD
SD
SD
J
DS
GS
GS
GS
DS
GS
GS
GS
GS
DD
GS
= 250 A, V
= 35A, V
= 35A, V
= 35A, V
= 175
= 35A
= 15A
= 35A, dI
= 35A, dI
= 24V
= 0V
= 20V
= V
= 15V, V
= 0.5V, f = 1MHz
= 0V to 10V
= 0V to 5V
= 0V to 1V
= 15V, I
= 10V, R
Test Conditions
DS
o
C
, I
GS
GS
GS
D
D
SD
SD
GS
GS
GS
= 35A
= 10V
= 4.5V
= 10V,
= 250 A
/dt = 100A/ s
/dt = 100A/ s
Reel Size
= 0V,
= 0V
= 3.3
T
V
I
I
D
g
Tube
C
DD
13”
= 1.0mA
= 35A
= 150
= 15V
o
C
Tape Width
Min
1.2
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12mm
N/A
0.0032 0.0039
0.0036 0.0044
0.0051 0.0063
5160
990
590
Typ
2.1
91
48
14
18
83
83
42
5
9
9
-
-
-
-
-
-
-
-
-
-
-
FDD8870 / FDU8870 Rev. C2
1.25
Max
250
118
139
189
2.5
6.5
1.0
100
2500 units
62
37
21
Quantity
1
-
-
-
-
-
-
-
-
-
-
-
-
75 units
Units
nC
nC
nC
nC
nC
nC
nC
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
A