FDI8441 Fairchild Semiconductor, FDI8441 Datasheet - Page 2

• Manufacturer Part Number: FDI8441
• Description: MOSFET N-CH 40V 80A TO-262AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDI8441

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 280nC @ 10V
• Input Capacitance (ciss) @ Vds: 15000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 26 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDI8441 Rev.A
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
V
V
I
E
P
T
R
R
R
B
I
I
V
r
C
C
C
R
Q
Q
Q
Q
Q
D
DSS
GSS
DS(on)
DS
GS
AS
D
J
VDSS
GS(th)
θJC
θJA
θJA
iss
oss
rss
G
Device Marking
g(TOT)
g(TH)
gs
gs2
gd
, T
Symbol
Symbol
STG
FDI8441
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Ambient, 1in
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
FDI8441
Device
amb
Parameter
o
C
= 25
o
C, V
T
GS
C
J
TO-262AB
Parameter
= 25°C unless otherwise noted
Package
< 160
T
= 10V, with R
C
= 25°C unless otherwise noted
o
C, V
GS
I
V
V
V
V
I
I
T
V
f = 1MHz
V
V
V
D
D
D
J
DS
GS
GS
DS
DS
GS
GS
GS
= 250mA, V
= 80A, V
= 80A, V
θJA
= 175°C
= 10V)
2
= 0V
2
= 32V
= V
= 25V, V
= ±20V
= 0.5V, f = 1MHz
= 0 to 10V
= 0 to 2V
copper pad area
Test Conditions
= 43
Reel Size
GS
Tube
, I
o
GS
GS
C/W)
D
GS
GS
= 250μA
= 10V
= 10V,
= 0V,
= 0V
T
V
J
I
I
DD
g
D
= 150°C
(Note 1)
(Note 2)
= 1mA
= 35A
= 20V
Tape Width
NA
Min
40
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
See Figure 4
-55 to 175
Ratings
15000
1250
Typ
685
215
±20
947
300
0.5
1.1
2.8
2.2
3.8
62
43
29
60
32
49
40
80
26
2
-
-
-
-
www.fairchildsemi.com
±100
Quantity
Max
250
280
50 units
2.7
4.7
38
1
4
-
-
-
-
-
-
-
-
o
o
o
Units
Units
W/
C/W
C/W
C/W
mΩ
nC
nC
nC
nC
nC
μA
pF
pF
pF
mJ
nA
o
Ω
W
V
V
V
V
A
C
o
C