FDI8441 Fairchild Semiconductor, FDI8441 Datasheet - Page 3

MOSFET N-CH 40V 80A TO-262AB

FDI8441

Manufacturer Part Number
FDI8441
Description
MOSFET N-CH 40V 80A TO-262AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDI8441

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
280nC @ 10V
Input Capacitance (ciss) @ Vds
15000pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
26 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDI8441
Manufacturer:
Fairchild Semiconductor
Quantity:
135
Part Number:
FDI8441
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDI8441 Rev.A
Notes:
1: Starting T
2: Pulse width = 100s.
Electrical Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
t
t
t
t
t
t
V
t
Q
(on)
d(on)
r
d(off)
f
off
rr
SD
rr
Symbol
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
J
= 25
o
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
C, L = 0.46mH, I
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
AS
Parameter
= 64A.
T
J
= 25°C unless otherwise noted
certification.
V
V
I
I
I
I
SD
SD
F
F
DD
GS
= 35A, di/dt = 100A/μs
= 35A, di/dt = 100A/μs
= 35A
= 15A
3
= 20V, I
= 10V, R
Test Conditions
D
GS
= 35A
= 1.5Ω
Min
-
-
-
-
-
-
-
-
-
-
17.9
Typ
0.8
0.8
23
24
75
52
76
-
-
www.fairchildsemi.com
Max
1.25
147
1.0
77
68
99
-
-
-
-
Units
nC
ns
ns
ns
ns
ns
ns
ns
V
V

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