FDI8441 Fairchild Semiconductor, FDI8441 Datasheet - Page 4

• Manufacturer Part Number: FDI8441
• Description: MOSFET N-CH 40V 80A TO-262AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDI8441

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 280nC @ 10V
• Input Capacitance (ciss) @ Vds: 15000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 26 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDI8441 Rev.A
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
10000
1000
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
1E-3
0.01
10
0.1
0
10
2
1
10
-5
V
-5
SINGLE PULSE
GS
D = 0.50
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
25
= 10V
0.20
0.10
0.05
0.02
0.01
T
C
, CASE TEMPERATURE
50
Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
75
10
-4
-4
100
125
Figure 4. Peak Current Capability
(
o
C
10
)
10
t, RECTANGULAR PULSE DURATION(s)
t, RECTANGULAR PULSE DURATION(s)
-3
150
-3
175
4
10
Figure 2. Maximum Continuous Drain Current vs
10
-2
-2
300
250
200
150
100
50
0
25
50
10
Case Temperature
10
-1
T
NOTES:
DUTY FACTOR: D = t
PEAK T
-1
C
, CASE TEMPERATURE
75
CURRENT LIMITED
BY PACKAGE
J
= P
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
C
I = I
DM
100
= 25
25
x Z
o
C
θJC
10
P
10
o
DM
1
0
C DERATE PEAK
/t
x R
125
2
0
175 - T
θJC
150
www.fairchildsemi.com
t
1
+ T
(
o
C
t
V
C
2
150
C
GS
)
= 10V
10
175
10
1
1