FDI8441 Fairchild Semiconductor, FDI8441 Datasheet - Page 6

• Manufacturer Part Number: FDI8441
• Description: MOSFET N-CH 40V 80A TO-262AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDI8441

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 280nC @ 10V
• Input Capacitance (ciss) @ Vds: 15000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 26 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDI8441 Rev.A
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
Figure 13. Capacitance vs Drain to Source
40000
10000
1000
1.2
1.0
0.8
0.6
0.4
100
-80
0.1
f = 1MHz
V
GS
-40
V
Junction Temperature
= 0V
DS
T
J
, DRAIN TO SOURCE VOLTAGE
, JUNCTION TEMPERATURE
0
Voltage
1
40
C
80
rss
120
10
(
V
I
C
D
C
o
GS
oss
C
iss
=
160
)
(
250
=
V
)
V
DS
μ
A
200
50
6
Figure 14. Gate Charge vs Gate to Source Voltage
Breakdown Voltage vs Junction Temperature
10
1.15
1.10
1.05
1.00
0.95
0.90
Figure 12. Normalized Drain to Source
8
6
4
2
0
0
-80
I
D
= 80A
I
D
= 250
-40
50
T
μ
J
V
A
, JUNCTION TEMPERATURE
DD
Q
= 20V
g
0
, GATE CHARGE(nC)
100
V
40
DD
= 15V
150
80
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120
V
200
DD
(
= 25V
o
C
160
)
250
200