FDI8441 Fairchild Semiconductor, FDI8441 Datasheet - Page 5

• Manufacturer Part Number: FDI8441
• Description: MOSFET N-CH 40V 80A TO-262AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDI8441

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 280nC @ 10V
• Input Capacitance (ciss) @ Vds: 15000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 26 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDI8441 Rev.A
Typical Characteristics
Figure 5. Forward Bias Safe Operating Area
1000
4000
160
120
100
Figure 9. Drain to Source On-Resistance
80
40
0.1
10
0
2.0
1
50
40
30
20
10
Variation vs Gate to Source Voltage
0
1
Figure 7. Transfer Characteristics
3
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DD
V
V
LIMITED
BY PACKAGE
2.5
DS
= 5V
GS
V
4
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
GS
, GATE TO SOURCE VOLTAGE
T
T
J
J
3.0
(on)
T
= 25
= 25
5
J
= 175
o
o
SINGLE PULSE
T
T
C
C
J
C
= MAX RATED
= 25
o
μ
6
T
3.5
C
s
J
10
o
= 175
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
C
7
o
C
4.0
8
T
J
4.5
= -55
10us
10ms
100us
(
1ms
DC
V
9
o
)
C
μ
s
5.0
100
10
5
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 10. Normalized Drain to Source On
100
500
Figure 6. Unclamped Inductive Switching
10
160
120
1
0.01
80
40
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Resistance vs Junction Temperature
0
Figure 8. Saturation Characteristics
-80
0
If R = 0
t
If R ≠ 0
t
AV
AV
STARTING T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= (L)(I
= (L/R)ln[(I
0.1
-40
V
T
t
V
AS
AV
J
DS
, JUNCTION TEMPERATURE
GS
)/(1.3*RATED BV
, TIME IN AVALANCHE (ms)
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4.5V
1
AS
J
V
= 150
GS
*R)/(1.3*RATED BV
0
= 5V
Capability
1
= 10V
o
C
40
μ
10
DSS
2
STARTING T
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
- V
80
DD
DSS
100
)
- V
www.fairchildsemi.com
120
J
DD
3
= 25
(
) +1]
V
o
V
I
V
D
C
GS
GS
1000
GS
= 80A
)
o
160
C
= 3.5V
= 4V
= 10V
μ
5000
s
200
4