MC8641DVU1333JE Freescale Semiconductor, MC8641DVU1333JE Datasheet - Page 21

no-image

MC8641DVU1333JE

Manufacturer Part Number
MC8641DVU1333JE
Description
IC MPU DUAL CORE E600 1023FCCBGA
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MC8641DVU1333JE

Processor Type
MPC86xx PowerPC 32-Bit
Speed
1.333GHz
Voltage
1.05V
Mounting Type
Surface Mount
Package / Case
1023-FCCBGA
Family Name
MPC8xxx
Device Core
PowerPC
Device Core Size
32b
Frequency (max)
1.333GHz
Instruction Set Architecture
RISC
Supply Voltage 1 (typ)
1.05V
Operating Supply Voltage (max)
1.1V
Operating Supply Voltage (min)
1V
Operating Temp Range
0C to 105C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
1023
Package Type
FCCBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
-
Lead Free Status / Rohs Status
Supplier Unconfirmed

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC8641DVU1333JE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
6
This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the
MPC8641. Note that DDR SDRAM is Dn_GV
Dn_GV
6.1
Table 13
MPC8641 when Dn_GV
Table 14
Freescale Semiconductor
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
Notes:
1. D n _GV
2. D n _MV
3. V
4. Output leakage is measured with all outputs disabled, 0 V
Input/output capacitance: DQ, DQS, DQS
Delta input/output capacitance: DQ, DQS, DQS
Note:
1. This parameter is sampled. D n _GV
receiver. Peak-to-peak noise on D n _MV
equal to D n _MV
TT
(peak-to-peak) = 0.2 V.
DDR and DDR2 SDRAM
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
DD
provides the recommended operating conditions for the DDR2 SDRAM component(s) of the
provides the DDR2 capacitance when Dn_
DDR SDRAM DC Electrical Characteristics
DD
REF
(typ) = 1.8 V.
Parameter/Condition
is expected to be within 50 mV of the DRAM D n _GV
Table 13. DDR2 SDRAM DC Electrical Characteristics for D n _GV
is expected to be equal to 0.5 × D n _GV
MPC8641 and MPC8641D Integrated Host Processor Hardware Specifications, Rev. 2
Parameter/Condition
REF
OUT
OUT
. This rail should track variations in the DC level of D n _MV
Table 14. DDR2 SDRAM Capacitance for D n _GV
= 0.280 V)
= 1.420 V)
DD
(typ) = 1.8 V
DD
REF
= 1.8 V ± 0.090 V, f = 1 MHz, T
D n _MV
.
D n _GV
may not exceed ±2% of the DC value.
Symbol
V
V
V
I
I
I
OZ
OH
OL
TT
IH
IL
REF
DD
DD
DD
, and to track D n _GV
Symbol
(typ) = 2.5 V and DDR2 SDRAM is
C
0.49 × D n _GV
D n _MV
C
GV
D n _MV
DIO
IO
V
DD
OUT
DD
–13.4
1.71
–0.3
13.4
Min
–50
(typ) =
25
REF
4
REF
at all times.
D n _GV
+ 0.1
– 0.0
DD
1.8 V.
Min
A
6
= 25°C, V
DD
DD
D n _MV
D n _MV
DC variations as measured at the
REF
.
0.51 × D n _GV
D n _GV
DD
.
(typ)=1.8 V
OUT
REF
Max
1.89
REF
50
Max
DD
0.5
8
DD
= D n _GV
– 0.125
+ 0.04
+ 0.3
(typ) = 1.8 V
DD
DD
Unit
DDR and DDR2 SDRAM
pF
pF
/2, V
Unit
mA
mA
μA
V
V
V
V
V
OUT
Notes
1
1
Notes
1
2
3
4
21

Related parts for MC8641DVU1333JE