FDMS3615S Fairchild Semiconductor, FDMS3615S Datasheet - Page 3

MOSFET Power DUAL N-Channel PowerTrench MOSFET

FDMS3615S

Manufacturer Part Number
FDMS3615S
Description
MOSFET Power DUAL N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMS3615S

Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.8 mOhms
Forward Transconductance Gfs (max / Min)
63 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
16 A
Power Dissipation
2.3 W
Mounting Style
SMD/SMT
Package / Case
Power 56
Fall Time
1.4 ns
Gate Charge Qg
19 nC
Rise Time
1.7 ns
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS3615S
Manufacturer:
ON/安森美
Quantity:
20 000
FDMS3615S Rev.C6
©2011 Fairchild Semiconductor Corporation
Electrical Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
4. E
5. E
V
t
Q
rr
by the user's board design.
SD
rr
Symbol
AS
AS
θJA
of 38 mJ is based on starting T
of 98 mJ is based on starting T
is determined with the device mounted on a 1 in
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
J
J
= 25
= 25
a. 55 °C/W when mounted on
c. 125 °C/W when mounted on a
o
o
C; N-ch: L = 0.3 mH, I
C; N-ch: L = 1 mH, I
a 1 in
minimum pad of 2 oz copper
2
pad of 2 oz copper
T
2
J
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
= 25°C unless otherwise noted
AS
AS
= 14 A, V
= 16 A, V
V
V
Q1
I
Q2
I
F
F
GS
GS
= 16 A, di/dt = 100 A/s
= 18 A, di/dt = 300 A/s
= 0 V, I
= 0 V, I
DD
DD
= 23 V, V
= 23 V, V
Test Conditions
S
S
3
= 16 A
= 18 A
GS
GS
= 10 V. 100% test at L= 0.3 mH, I
= 10 V. 100% test at L= 0.3 mH, I
(Note 2)
(Note 2)
θJC
d. 125 °C/W when mounted on a
b. 55 °C/W when mounted on
Type
minimum pad of 2 oz copper
a 1 in
is guaranteed by design while R
Q1
Q2
Q1
Q2
Q1
Q2
AS
AS
= 21 A.
2
pad of 2 oz copper
= 14.6 A.
Min
Typ
0.8
0.8
19
24
19
6
www.fairchildsemi.com
θCA
Max
1.2
1.2
34
38
12
35
is determined
Units
nC
ns
V

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