FDMS3615S Fairchild Semiconductor, FDMS3615S Datasheet - Page 8

• Manufacturer Part Number: FDMS3615S
• Description: MOSFET Power DUAL N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3615S

• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.8 mOhms
• Forward Transconductance Gfs (max / Min): 63 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 2.3 W
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Fall Time: 1.4 ns
• Gate Charge Qg: 19 nC
• Rise Time: 1.7 ns
• Lead Free Status / Rohs Status: Details

FDMS3615S Rev.C6
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
0.01
30
10
100
10
0.001
0.1
1
10
8
6
4
2
0
Figure 20. Gate Charge Characteristics
1
0.01
0
I
D
SINGLE PULSE
T
R
T
Figure 22. Unclamped Inductive
= 18 A
J
A
θ
THIS AREA IS
LIMITED BY r
Figure 24. Forward Bias Safe
JA
= MAX RATED
= 25
= 125
0.01
o
V
C
Switching Capability
DS
t
V
0.1
AV
o
DD
, DRAIN to SOURCE VOLTAGE (V)
8
C/W
, TIME IN AVALANCHE (ms)
Operating Area
Q
DS
= 13 V
g
(
, GATE CHARGE (nC)
on
0.1
V
)
DD
T
J
= 10 V
= 125
1
16
1
o
T
C
J
V
= 25
DD
= 16 V
10
o
10
C
T
24
J
= 100
100 ms
10s
1 ms
10 ms
1s
DC
o
C
100 200
100200
32
8
T
J
= 25°C unless otherwise noted
10000
1000
Figure 23. Maximum Continuous Drain
3000
1000
100
Figure 25. Single Pulse Maximum Power
20
15
10
100
0.5
10
50
5
0
10
1
25
0.1
Current vs Ambient Temperature
-4
Figure 21. Capacitance vs Drain
f = 1 MHz
V
GS
10
= 0 V
-3
50
V
T
to Source Voltage
DS
A
,
, DRAIN TO SOURCE VOLTAGE (V)
10
t, PULSE WIDTH (sec)
AMBIENT TEMPERATURE (
Dissipation
-2
75
10
1
-1
V
GS
V
GS
= 4.5 V
1
100
= 10 V
SINGLE PULSE
R
R
θ
10
JA
θ
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JA
o
= 125
C )
125
= 55
100
10
o
o
C/W
C/W
C
C
C
oss
iss
rss
1000
150
25