FDMS3615S Fairchild Semiconductor, FDMS3615S Datasheet - Page 7

• Manufacturer Part Number: FDMS3615S
• Description: MOSFET Power DUAL N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3615S

• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.8 mOhms
• Forward Transconductance Gfs (max / Min): 63 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 2.3 W
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Fall Time: 1.4 ns
• Gate Charge Qg: 19 nC
• Rise Time: 1.7 ns
• Lead Free Status / Rohs Status: Details

FDMS3615S Rev.C6
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
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27
18
36
27
18
9
0
1.6
1.4
1.2
1.0
0.8
0.6
0.0
9
0
Figure 14. On-Region Characteristics
Figure 16. Normalized On-Resistance
1.0
-75
Figure 18. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
D
-50
GS
= 18 A
= 5 V
vs Junction Temperature
V
V
V
V
V
= 10 V
DS
GS
GS
GS
1.5
GS
V
T
GS
-25
,
J
= 5.5 V
= 4 V
= 3.5 V
= 10 V
DRAIN TO SOURCE VOLTAGE (V)
,
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
0.5
T
0
J
T
= 25
2.0
J
= 150
25
o
μ
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
C
s
o
C
50
2.5
1.0
75
V
GS
o
100 125 150
T
3.0
C )
J
= 3 V
= -55
μ
s
o
C
1.5
3.5
T
J
7
= 25 °C unless otherwise noted
Figure 15. Normalized on-Resistance vs Drain
0.001
0.01
0.1
15
12
50
10
9
6
3
0
1
8
6
4
2
0
Figure 17. On-Resistance vs Gate to
0.0
Forward Voltage vs Source Current
0
2
Figure 19. Source to Drain Diode
V
GS
Current and Gate Voltage
= 0 V
V
SD
T
0.2
J
, BODY DIODE FORWARD VOLTAGE (V)
V
= 125
GS
Source Voltage
I
9
D
,
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
V
o
V
GS
C
4
GS
= 4 V
0.4
= 3 V
T
T
J
J
= 125
= 25
T
18
I
T
D
J
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
J
= -55
= 18 A
V
= 25
V
o
GS
GS
o
C
0.6
C
= 5.5 V
= 3.5 V
o
o
C
C
6
27
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0.8
V
GS
= 10 V
μ
μ
s
s
1.0
36
8