FDMS3615S Fairchild Semiconductor, FDMS3615S Datasheet - Page 5

• Manufacturer Part Number: FDMS3615S
• Description: MOSFET Power DUAL N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3615S

• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.8 mOhms
• Forward Transconductance Gfs (max / Min): 63 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 2.3 W
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Fall Time: 1.4 ns
• Gate Charge Qg: 19 nC
• Rise Time: 1.7 ns
• Lead Free Status / Rohs Status: Details

FDMS3615S Rev.C6
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
0.01
20
10
100
10
0.001
0.1
1
10
Figure 7.
8
6
4
2
0
1
0.01
0
I
T
D
Figure 9.
SINGLE PULSE
T
R
J
A
Figure 11. Forward Bias Safe
θ
= 16 A
JA
= MAX RATED
THIS AREA IS
LIMITED BY r
= 25
= 125
0.01
Switching Capability
o
V
C
Gate Charge Characteristics
DS
t
AV
0.1
o
5
, DRAIN to SOURCE VOLTAGE (V)
C/W
Operating Area
, TIME IN AVALANCHE (ms)
Unclamped Inductive
Q
DS
g
, GATE CHARGE (nC)
(
on
V
0.1
DD
)
T
= 10 V
J
= 125
1
10
V
o
DD
1
T
C
J
= 16 V
= 25
V
DD
T
10
J
o
= 13 V
C
= 100
15
10
100
100 ms
10s
DC
10 ms
1s
1 ms
o
C
μ
s
100200
100
20
T
J
5
= 25°C unless otherwise noted
1000
3000
1000
100
0.5
20
15
10
100
10
5
0
Figure 10.
1
10
50
25
0.1
-4
Figure 12.
Limited by Package
Current vs Ambient Temperature
Figure 8.
f = 1 MHz
V
GS
10
= 0 V
-3
50
V
T
DS
A
Maximum Continuous Drain
Power Dissipation
to Source Voltage
,
10
t, PULSE WIDTH (sec)
, DRAIN TO SOURCE VOLTAGE (V)
AMBIENT TEMPERATURE (
Single Pulse Maximum
Capacitance vs Drain
-2
75
10
1
-1
V
GS
= 4.5 V
1
100
V
GS
SINGLE PULSE
R
R
10
θ
= 10 V
θ
JA
JA
o
C )
= 125
125
= 55
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100
10
o
o
C/W
C/W
C
C
C
iss
oss
rss
1000
150
25