A3P125-QNG132 MICROSEMI, A3P125-QNG132 Datasheet - Page 24

• Manufacturer Part Number: A3P125-QNG132
• Manufacturer: MICROSEMI

Specifications of A3P125-QNG132

• Lead Free Status / Rohs Status: Compliant

Automotive ProASIC3 DC and Switching Characteristics
User I/O Characteristics
Figure 2-3 • Timing Model
2- 12
I/O banks only)
to Advanced
(applicable
LVPECL
(Applicable for
Advanced I/O
t
PY
Banks only)
= 0.94 ns (Advanced I/O banks)
Clock
M-LVDS
Input LVTTL
BLVDS,
LVDS,
Table 2-13 • Enable Rate Guidelines Recommended for Power Calculation
Timing Model
Component
β
β
β
Operating Conditions: –1 Speed, Automotive Grade 2 Temp. Range (T
VCC = 1.425 V
1
2
3
t
PY
(non-registered)
(registered)
= 1.29 ns
t
I/O Module
I/O Module
t
t
PY
ICLKQ
ISUD
= 1.47 ns
= 0.31 ns
= 0.29 ns
D
Q
I/O output buffer enable rate
RAM enable rate for read operations
RAM enable rate for write operations
Register Cell
t
t
CLKQ
SUD
D
= 0.51 ns
= 0.66 ns
Combinational Cell
Q
(Advanced I/O banks)
Combinational Cell
t
PD
Combinational Cell
t
PD
Clock
Input LVTTL
t
PY
= 1.04 ns
t
= 0.67 ns
PD
= 0.94 ns
= 0.56 ns
Combinational Cell
Combinational Cell
Y
Y
t
PD
t
PD
Y
R e visio n 1
= 0.60 ns
= 0.56 ns
Register Cell
Combinational Cell
t
t
Definition
CLKQ
SUD
D
t
PD
Y
Y
= 0.51 ns
(non-registered)
= 0.66 ns
= 0.58 ns
(Advanced I/O banks)
t
I/O Module
Q
DP
t
Clock
Input LVTTL
PY
= 3.25 ns (Advanced I/O banks)
(non-registered)
(non-registered)
t
t
DP
I/O Module
I/O Module
DP
= 0.94 ns
Y
= 4.89 ns (Advanced I/O banks)
= 4.52 ns (Advanced I/O banks)
(non-registered)
t
I/O Module
DP
LVTTL Output Drive Strength = 12 mA
= 1.66 ns
t
t
D
OCLKQ
OSUD
(registered)
I/O Module
LVTTL Output drive Strength = 8 mA
LVCMOS 1.5 V Output Drive Strength = 4 mA
High Slew Rate
Q
= 0.37 ns
= 0.70 ns
t
(Advanced I/O banks)
DP
High Slew Rate
J
= 3.25 ns
LVPECL (applicable to
Advanced I/O banks only)
= 115°C), Worst Case
High Slew Rate
LVTTL 3.3 V Output Drive
Strength = 12 mA
High Slew Rate
Guideline
12.5%
12.5%
100%