A3P125-QNG132 MICROSEMI, A3P125-QNG132 Datasheet - Page 56

• Manufacturer Part Number: A3P125-QNG132
• Manufacturer: MICROSEMI

Specifications of A3P125-QNG132

• Lead Free Status / Rohs Status: Compliant

Automotive ProASIC3 DC and Switching Characteristics
Table 2-66 • Minimum and Maximum DC Input and Output Levels
Figure 2-10 • AC Loading
Table 2-67 • AC Waveforms, Measuring Points, and Capacitive Loads
2- 44
1.5 V
LVCMOS
Drive
Strength
2 mA
4 mA
Notes:
1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
2. Currents are measured at 125°C junction temperature.
3. Software default selection highlighted in gray.
Input Low (V)
0
*
Measuring point = V
Min.
–0.3 0.30 * VCCI 0.7 * VCCI
–0.3 0.30 * VCCI 0.7 * VCCI
V
Applicable to Standard Plus I/O Banks
Test Point
Datapath
VIL
Max.
trip.
V
See
Table 2-18 on page 2-17
35 pF
Min.
Input High (V)
V
VIH
1.5
Max.
3.6
3.6
Enable Path
V
Test Point
0.25 * VCCI
0.25 * VCCI
R = 1 k
for a complete table of trip points.
Max.
VOL
R e visio n 1
V
Measuring Point* (V)
R to VCCI for t
R to GND for t
35 pF for t
5 pF for t
0.75 * VCCI
0.75 * VCCI
VOH
0.75
Min.
V
HZ
ZH
/ t
mA mA
I
/ t
OL
LZ
2
4
HZ
LZ
ZHS
/ t
I
/ t
OH
2
4
ZL
ZH
/ t
ZL
/ t
/ t
Max.
mA
I
OSL
ZLS
ZHS
/ t
0
0
ZLS
1
C
LOAD
Max.
I
mA
35
OSH
0
0
(pF)
1
µA
10 10
10 10
I
IL
2
µA
I
IH
2